Abstract
A new type of boundary condition, named Möbius or antiperiodic boundary conditions, is proposed and tested, both analytically and within the context of numerical simulations. It is shown that these boundary conditions are very useful for twist grain boundary atomistic simulations. By contrast to the use of the ordinary Born von Kármán periodic boundary conditions, they allow only one grain boundary per box instead of two. The risk of migration and overinteraction of two grain boundaries at high temperature is thus avoided while more complex grain boundaries can also be tackled at the same computer price. Such examples are presented and discussed.
Similar content being viewed by others
References
J.L. Putaux and J. Thibault-Desseaux, J. Physique 51, C1-323 (1990).
A.Bourret and J.L.Rouvière, in Polycristalline Semiconductors, Springer Proceedings in Physics, vol. 35, edited by J.H.Werner, H.J.Möller and H.P.Strunk (Springer Verlag, Berlin, 1989), p. 8.
J.L.Rouvière and A.Bourret, in Polycristalline Semiconductors, Springer Proceedings in Physics, vol. 35, edited by J.H.Werner, H.J.Möller and H.P.Strunk (Springer Verlag, Berlin, 1989), p. 19.
de Saint-Venant, A.J.C. Barré, in Mémoire sur la torsion des prismes., Mém. des Savants étrangers (Paris 1855).
A.H.Cottrell, in The Mechanical Properties of Matter (John Wiley and Sons, New York, 1964), p. 93.
J.F.Lutsko, D.Wolf, S.Yip, S.R.Phillpot, and T.Nguyen, Physical Review B 38 11572 (1988).
W.Ledermann, Proc. Roy. Soc. Ser. A 182, 362 (1944).
S.Nosé, Mol. Phys. 52, 255 (1984).
S.Nosé, J. Chem. Phys. 81, 511 (1984).
S.Kirkpatrick, C.D.Gelatt, and M.P.Vecchi, Science 220, 671 (1983).
J.R.BeelerJr. and G.L.Kulcinski, in Interatomic Potentials and Simulations of Lattice Defects, edited by P.C.Gehlen, J.R.BeelerJr., and R.I.Jaffe (Plenum Press, New York, 1972), p. 735.
G.H.Bishop, G.A.Bruggeman, Ralph J.Harrison, J.A.Cox, and S.Yip, in Nuclear Metallurgy Vol. 20, edited by R.J.Arsenault, J.R.BeelerJr., and J.A.Simmons (National Bureau of Standards, Gaitherburg, MD, 1976), p. 522.
P.N.Keating, Phys. Rev. 145, 637 (1966).
G.A.Baraff, E.O.Kane, and M.Schlüter, Phys. Rev. B 21, 5662 (1980).
F.H.Stillinger and T.A.Weber, Phys. Rev. B 31, 5262 (1985).
J.Tersoff, Phys. Rev. Lett. 56, 632 (1986).
J.Tersoff, Phys. Rev. B 37, 6991 (1988).
J.Tersoff, Phys. Rev. B 38, 9902 (1988).
J.Q.Broughton and X.Q.Li, Phys. Rev. B 35, 9120 (1987).
M.Schulz and R.Blachnik, in Landolt-Börstein III/17a, edited by O.Madelung (Springer Verlag, Heidelberg, 1982), p. 61.
P.J.E.Aldred and M.Hart, Proc. Roy. Soc. Lond. A 332, 239 (1973).
J.S.Reid and J.Pirie, Acta Cryst. A 36, 957 (1980).
K. Soma and H. Matsuo, Phys. Stat. Sol. (b) 111, K93 (1982).
J.B.Theeten and L.Dobrzynski, Phys. Rev. B 5, 1529 (1972).
F.A.Lindemann, Phys. Zeits. 11, 609 (1910).
J.J.Gilvarry, Phys. Rev. 102, 308 (1956).
M.K.Kluge, J.R.Ray, and A.Rahman, Phys. Rev. B 36, 4234 (1987).
S.R.Phillpot, J.F.Lutsko, D.Wolf, and S.Yip, Phys. Rev. B 40, 2831 (1989).
M.Born, J. Chem. Phys. 7, 591 (1939).
C.Z.Wang, C.T.Chan, and K.M.Ho, Phys. Rev. B 42, 11276 (1990).
A.M.Papon, M.Petit, and J.J.Bacmann, Phill. Mag. A 40, 573 (1984).
A.Bourret and J.J.Bacmann, Revue Phys. Appl. 22, 563 (1987).
A.Georges, A.Jacques, X.Baillin, J.Thibault-Desseaux, and J.L.Putaux, Inst. Phys. Conf. Ser. 104, 349 (1989).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hardouin Duparc, O.B.M., Torrent, M. A new type of periodie boundary condition useful for high-temperature atomistic simulations of grain boundaries: Applications in semiconductors. Interface Sci 2, 7–16 (1994). https://doi.org/10.1007/BF00188815
Issue Date:
DOI: https://doi.org/10.1007/BF00188815