Abstract
Superlattice structures consist of alternate layers of two different materials, each having a fixed thickness. These structures thus have an additional periodicity along the growth direction and thus behave like a quasi-crystal with a periodicity much larger than that in single-crystal materials having a periodicity of the order of lattice constant of crystal and exhibit several interesting phenomena. The optical, electrical and other physical properties of these structures are significantly different from those of individual layers. In the present article, we present some interesting experimental results observed for nc-Si/a-Si:H-based superlattice structures. Though the lattice constant and electron affinity of nc-Si/a-Si:H are nearly matched, their structural, electrical and optical properties are significantly different. Our studies show that the electrical transport properties of these structures can be tuned by controlling the thickness of the individual layer. The superlattice structures with thick individual layers show excess conductivity in dark after exposure to light. On the other hand, strong photoluminescence (PL) signal in the visible range is observed for the structures with thin individual layers and the PL peak energy depends upon the thickness of the nc-Si layer. The nc-Si/a-Si:H superlattice structures can be used for silicon-based photonic devices in the integrated circuits.
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References
L. Esaki, R. Tsu, IBM J. Res. Dev. 14, 61 (1970)
L. Eskai, IEEE J. Quantum Electron. 22, 1611 (1986)
A. Wacker, Phys. Rep. 3(357), 1 (2002)
B. Movaghar, Semicond. Sci. Technol. 2, 185 (1987)
N. Chen, X. Li, X. Wang, S. Xie, W.Q. Tian, S. Zhang, H. Sun, IEEE Trans. Nanotechnol. 17, 140 (2018)
H. Xu, B. Chen, F. Jin, Z. Guo, G. Gao, F. Chen, W. Wu, Mater. Res. Express 3, 126403 (2016)
H.J. Haugan, F. Szmulowicz, K. Mahalingam, G.J. Brown, S.R. Munshi, B. Ullrich, Appl. Phys. Lett. 87, 261106 (2005)
G.H. Döhler, Physica Status Solidi (b) 52, 533 (1972)
G.H. Döhler, J. Vac. Sci. Technol. 16, 851 (1979)
G.H. Döhler, H. Künzel, K. Ploog, Phys. Rev. B 25, 2616 (1982)
M. Hundhausen, L. Ley, R. Carius, Phys. Rev. Lett. 53, 1598 (1984)
J. Kakalios, H. Fritzsche, Phys. Rev. Lett. 53, 1602 (1984)
A. Yadav, P. Agarwal, R. Biswas, J. Mater. Sci.: Mater. Electron. 30, 4696 (2019)
P. Photopoulos, A.G. Nassiopoulou, D.N. Kouvatsos, A. Travlos, Mater. Sci. Eng., B 69–70, 345 (2000)
D.J. Lockwood, Z.H. Lu, J.M. Baribeau, Phys. Rev. Lett. 76, 539 (1996)
S. Pattnaik, N. Chakravarty, R. Biswas, V. Dalal, D. Slafer, Sol. Energy Mater. Sol. Cells 129, 115 (2014)
B.I. Sthal, Ph.D. thesis submitted to University of Rosensburg, Germany, 2008
D.T. Norton Jr, Ph.D. thesis submitted to University of Iowa, Iowa, 2013
M.B.H. Breese, D. Mangaiyarkarasi, Opt. Express 15, 5537 (2007)
Y. Nakata, M. Asada, Y. Suematsu, Electron. Lett. 22, 58 (1986)
Y. Nakata, M. Asada, Y. Suematsu, Surf. Sci. 174, 519 (1986)
G.D. Mahan, L.M. Woods, Phys. Rev. Lett. 80, 4016 (1998)
L.W. Whitlow, T. Hirano, J. Appl. Phys. 78, 5460 (1995)
L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)
L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, M. Zacharias, P.M. Fauchet, J.P. McCaffrey, D.J. Lockwood, Appl. Phys. Lett. 72, 43 (1998)
M. Zacharias, L. Tsybeskov, K.D. Hirschman, P.M. Fauchet, J. Bläsing, P. Kohlert, P. Veit, J. Non-Cryst. Solids 227–230, 1132 (1998)
Y.-H. So, S. Huang, G. Conibeer, M.A. Green, Thin Solid Films 519, 5408 (2011)
A. Yadav, P. Agarwal, Superlattices Microstruct. 85, 776 (2015)
A. Yadav, P. Agarwal, Mater. Sci. Semicond. Process. 61, 5 (2017)
K. Ploog, G.H. Döhler, Adv. Phys. 32, 285 (1983)
S.C. Agarwal, S. Guha, J. Non-Cryst. Solids 77–78, 1097 (1985)
S.C. Agarwal, S. Guha, Phys. Rev. B 32, 8469 (1985)
G.S. Paul, P. Agarwal, J. Appl. Phys. 106, 103705 (2009)
D. Azulay, O. Millo, S. Silbert, I. Balberg, N. Naghavi, Appl. Phys. Lett. 86, 212102 (2005)
J.Y. Lin, H.X. Jiang, Phys. Rev. B 41, 5178 (1990)
H.X. Jiang, J.Y. Lin, Phys. Rev. Lett. 64, 2547 (1990)
D. Cammi, C. Ronning, Adv. Condens. Matter Phys. 2014, 5 (2014)
M.N. Islam, P.S. Dobal, H.D. Bist, S. Kumar, Solid State Commun. 107, 43 (1998)
H.J. Queisser, D.E. Theodorou, Phys. Rev. B 33, 4027 (1986)
Y.C.A. Shih, B.G. Streetman, Appl. Phys. Lett. 62, 2655 (1993)
T. Ishibashi, Y. Suzuki, H. Okamoto, Jpn. J. Appl. Phys. 20, L623 (1981)
V.K. Kononenko, H.W. Kunert, I.S. Manak, D.V. Ushakov, J. Appl. Spectrosc. 70, 115 (2003)
S. Tong, X.N. Liu, X.M. Bao, Appl. Phys. Lett. 66, 469 (1995)
L. Khriachtchev, S. Novikov, J. Lahtinen, J. Appl. Phys. 92, 5856 (2002)
K. Ou, S. Wang, M. Huang, Y. Zhang, Y. Wang, X. Duan, L. Yi, J. Lumin. 199, 34 (2018)
M.B.A.E. Wolf, Cambridge University Press, Cambridge, 1999
E. Hecht, Optics, 4th edn. (Addison Wesley, San Francisco, 2002), p. 425–500
A.K. Ghatak, K. Thyagarajan, Optical electronics (Cambridge University Press, Cambridge, 1989), p. 57
J.A. Pradeep, Ph.D. thesis submitted to IIT Guwahati, India, 2011
A. Yadav, Ph.D. thesis submitted to IIT Guwahati, India, 2018
A. Yadav, P. Agarwal, Mater. Today: Proc. 4, 12722 (2017)
A. Kastalsky, J.C.M. Hwang, Solid State Commun. 51, 317 (1984)
M. Hundhausen, L. Ley, Phys. Rev. B 32, 6655 (1985)
F.C. Su, S. Levine, P.E. Vanier, F.J. Kampas, Appl. Phys. Lett. 47, 612 (1985)
K.H. Jun, K.S. Lim, J. Non-Cryst. Solids 261, 268 (2000)
V.L. Dalal, A. Madhavan, J. Non-Cryst. Solids 354, 2403 (2008)
A. Madan, P.G. Le Comber, W.E. Spear, J. Non-Cryst. Solids 20, 239 (1976)
G.W. Neudeck, A.K. Malhotra, J. Appl. Phys. 46, 239 (1975)
N.B. Goodman, H. Fritzsche, H. Ozaki, J. Non-Cryst. Solids 35–36, Part 1, 599 (1980)
W.E. Spear, P.G. Le Comber, J. Non-Cryst. Solids 8–10, 727 (1972)
T. Tiedje, C.R. Wronski, B. Abeles, J.M. Cebulka, Solar Cells 2, 301 (1980)
M. Hirose, T. Suzuki, G.H. Dohler, Appl. Phys. Lett. 34, 234 (1979)
Y.T.H. Okushi, S. Yamasaki, H. Oheda, K. Tanaka, J. Phys. Colloques 42, C4 (1981)
J. Beichler, H. Mell, K. Weber, J. Non-Cryst. Solids 59–60, Part 1, 257 (1983)
N.M. Johnson, J. Non-Cryst. Solids 59–60, Part 1, 265 (1983)
E. Bhattacharya, S. Guha, K.V. Krishna, D.R. Bapat, J. Appl. Phys. 53, 6285 (1982)
H.S. Soh, C. Lee, J. Jang, M.Y. Jung, S.S. Yoo, Appl. Phys. Lett. 63, 779 (1993)
S.B. Husain, M. Zulfequar, M.A. Majeed Khan, M. Husain, Curr. Appl. Phys. 4, 445 (2004)
A. Bozhko, M. Shupegin, T. Takagi, Diam. Relat. Mater. 11, 1753 (2002)
Z. Çaldıran, M. Şinoforoğlu, Ö. Metin, Ş. Aydoğan, K. Meral, J. Alloy. Compd. 631, 261 (2015)
W.D. Boer, J. Phys. Colloques 42, C4 (1981)
V. Lehmann, U. Gösele, Appl. Phys. Lett. 58, 856 (1991)
W.L. Wilson, P.F. Szajowski, L.E. Brus, Science 262, 1242 (1993)
S. Furukawa, T. Miyasato, Phys. Rev. B 38, 5726 (1988)
D.C. Hannah, J. Yang, N.J. Kramer, G.C. Schatz, U.R. Kortshagen, R.D. Schaller, ACS Photonics 1, 960 (2014)
O. Yukio, T. Keiji, T. Fumitaka, M. Hiroaki, K. Kenji, Jpn. J. Appl. Phys. 31, L365 (1992)
S. Veprek, F.A. Sarott, Z. Iqbal, Phys. Rev. B 36, 3344 (1987)
L.E. Brus, J. Chem. Phys. 80, 4403 (1984)
Acknowledgments
Financial support for fabricating rf-PECVD system was received from Department of Science and Technology (DST) [Grant No. DST/TM/SERI/2K11/78(G)]; and Defence Research and Development Organization (DRDO) [Grant No. ERIP/ER/0900376/M/01/1297], New Delhi, India. The Hot wire CVD system was fabricated through the financial support from Department of Science and Technology (DST) [Grant No. DSTSR-S2-CMP-32-2003]. The study was sponsored by the Council of Scientific and Industrial Research (CSIR), New Delhi, India [80(0082)/13/EMR(II)]. We also acknowledge the Department of Physics, IIT Guwahati and Centre for Instrument Facility (CIF), IIT Guwahati for different characterization facilities and other support. We also acknowledge the fruitful discussions with (Late) Professor Satish Chandra Agarwal (IIT Kanpur) and Professor Rana Biswas (Iowa state University, Ames, USA).
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Agarwal, P., Yadav, A. (2020). Optoelectronic Properties of Nanocrystalline Silicon-Based Superlattice Structures. In: Kumar, S., Aswal, D. (eds) Recent Advances in Thin Films. Materials Horizons: From Nature to Nanomaterials. Springer, Singapore. https://doi.org/10.1007/978-981-15-6116-0_9
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