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Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi

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Book cover Bismuth-Containing Alloys and Nanostructures

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 285))

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Abstract

GaAsBi alloys have been extensively studied in recent years, and the highest Bi concentration yet reached has been 22 %. Many photoelectric devices using this material have been produced, such as quantum well lasers, LEDs, solar cells, etc. The Bi incorporated into AlAs is expected to change the bandgap from indirect to direct. There are only a few theoretical reports on AlAsBi, however, experimental research results are seldom reported. In this chapter, we review the molecular beam epitaxy of GaAsBi and analyze the growth mechanism. Besides, we present the synthesis of AlAsBi by molecular beam epitaxy. The growth temperature, As/Ga flux ratio, Bi flux and the growth rate all have great influence on the Bi incorporation. Bismuth atoms play a surfactant role under As-rich conditions and an anti-surfactant role under Ga-rich conditions. Droplets tend to be formed on the surface of GaAsBi alloys due to the atomic size mismatch between Bi atoms and As atoms. The high-angle annular dark-field mode of scanning transmission electron microscopy images confirm Bi atoms cluster exsiting in GaAsBi films. Furthermore, we show the optical properties of GaAsBi and discuss the localized states induced by Bi. The photoluminescence wavelength of GaAsBi redshifts with increasing Bi concentration. The bandgap of GaAsBi is insensitive to temperature, which is important for developing un-cooled lasers. We discuss the influence of Bi incorporation on the electric and transport properties of GaAsBi. The types of dominant point defects induced by Bi incorporation are analyzed. The measurement results of the electron effective mass demonstrate that Bi incorporation not only changes the valence band but also has non-negligible influence on the conduction band in GaAsBi. For AlAsBi, we review the theoretical simulations and present the molecular beam epitaxy growth without substrate rotaion to investigate the influence of As/Al flux raio and the Bi flux on Bi incorporation.

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Li Yue, Xiaolei Zhang, Weiwen Ou & Zhenghao Shen

  2. School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China

    Xiaolei Zhang & Weiwen Ou

  3. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China

    Zhenghao Shen

  4. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Shumin Wang

  5. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden

    Shumin Wang

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    Shumin Wang

  2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

    Pengfei Lu

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Yue, L., Zhang, X., Ou, W., Shen, Z., Wang, S. (2019). Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi. In: Wang, S., Lu, P. (eds) Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science, vol 285. Springer, Singapore. https://doi.org/10.1007/978-981-13-8078-5_2

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