Summary
Diffusion coefficients of a variety of impurities from different columns of the atomic table have been measured by high resolution nuclear spectroscopy. The relevance of the resulting distribution lengths with respect to solar cell properties is discussed for short time deposition processes at elevated temperatures and long time operation at ambient temperatures.
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© 1982 ECSC, EEC, EAEC, Brussels and Luxembourg
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Kalbitzer, S., Reinelt, M., Stolz, W. (1982). Impurity Diffusion in Amorphous Silicon and its Implications for Solar Cells. In: Bloss, W.H., Grassi, G. (eds) Fourth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7898-0_177
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DOI: https://doi.org/10.1007/978-94-009-7898-0_177
Publisher Name: Springer, Dordrecht
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