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Stochastic Process Variation in Deep-Submicron CMOS

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 48))

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Abstract

The CMOS technology has dominated the mainstream silicon IC industry in the last few decades. As CMOS integrated circuits are moving into unprecedented operating frequencies and accomplishing unprecedented integration levels (Fig. 1.1), potential problems associated with device scaling—the short-channel effects—are also looming large as technology strides into the deep-submicron regime. Besides that it is costly to add sophisticated process options to control these side effects, the compact device modeling of short-channel transistors has become a major challenge for device physicists.

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Authors and Affiliations

  1. Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Delft, The Netherlands

    Amir Zjajo

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  1. Amir Zjajo
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Correspondence to Amir Zjajo .

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Zjajo, A. (2014). Introduction. In: Stochastic Process Variation in Deep-Submicron CMOS. Springer Series in Advanced Microelectronics, vol 48. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7781-1_1

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  • DOI: https://doi.org/10.1007/978-94-007-7781-1_1

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  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-007-7780-4

  • Online ISBN: 978-94-007-7781-1

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