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Flash Memories pp 5–110Cite as

Fundamentals of Non-Volatile Memories

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Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 40))

Abstract

The subject of this chapter is to introduce the fundamentals of non-volatile memories. An overview about electron and non-electron based cells is given followed by a cell assessment for high density non-volatile memories. The link between memory cell and memory array performance parameters is introduced and in depth analysed for NAND and NOR array architectures. The design specific aspects of sensing and program and erase algorithm techniques are introduced for floating gate and charge trapping cell based flash memories.

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Notes

  1. 1.

    NROM\(^\mathrm{TM}\) invented by Saifun Technlogies, MirrorBit\(^\mathrm{TM}\) used by AMD and Spansion, TwinFlash\(^{\circledR }\) used by Infineon Technologies Flash GmbH.

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    Detlev Richter

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Richter, D. (2014). Fundamentals of Non-Volatile Memories. In: Flash Memories. Springer Series in Advanced Microelectronics, vol 40. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6082-0_2

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