Abstract
One of the more significant technological achievements during the last twenty years has been the development of the field of microelectromechanical systems (GlossaryTerm
MEMS
) and its offshoot, nanoelectromechanical systems (GlossaryTermNEMS
). These developments were made possible by significant advancements in the materials and processing technologies used in the fabrication of MEMS and NEMS devices. While initial developments capitalized on a mature Si infrastructure built for the integrated circuit (GlossaryTermIC
) industry, recent advances have come about using materials and processes not typically associated with IC fabrication, a trend that is likely to continue as new application areas emerge.A well-rounded understanding of MEMS and NEMS technology requires a basic knowledge of the materials used to construct the devices, since material properties often govern device performance and dictate fabrication approaches. An understanding of the materials used in MEMS and NEMS involves an understanding of material systems, since such devices are rarely constructed of a single material, but rather a collection of materials working in conjunction with each other to provide critical functions. It is from this perspective that the following chapter is constructed. This chapter is not a summary of all materials used in MEMS and NEMS, as such a work would itself constitute a single text of significant size. It does, however, present a selection of some of the more popular materials, as well as those that illustrate the importance of viewing MEMS and NEMS in terms of material systems.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
C.S. Smith: Piezoresistive effect in germanium and silicon, Phys. Rev. 94, 1–10 (1954)
A.N. Cleland, M.L. Roukes: Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals, Appl. Phys. Lett. 69, 2653–2655 (1996)
D.W. Carr, H.G. Craighead: Fabrication of nanoelectromechanical systems in single-crystal silicon using silicon on insulator substrates and electron beam lithography, J. Vacuum Sci. Technol. B 15, 2760–2763 (1997)
T. Kamins: Polycrystalline Silicon for Integrated Circuits and Displays, 2nd edn. (Kluwer Academic, Boston 1988)
J.J. McMahon, J.M. Melzak, C.A. Zorman, J. Chung, M. Mehregany: Deposition and characterization of in-situ boron doped polycrystalline silicon films for microelectromechanical systems applications, Mater. Res. Symp. Proc. 605, 31–36 (2000)
L. Cao, T.S. Kin, S.C. Mantell, D. Polla: Simulation and fabrication of piezoresistive membrane type MEMS strain sensors, Sens. Actuat. 80, 273–279 (2000)
H. Guckel, T. Randazzo, D.W. Burns: A simple technique for the determination of mechanical strain in thin films with application to polysilicon, J. Appl. Phys. 57, 1671–1675 (1983)
R.T. Howe, R.S. Muller: Stress in polysilicon and amorphous silicon thin films, J. Appl. Phys. 54, 4674–4675 (1983)
X. Zhang, T.Y. Zhang, M. Wong, Y. Zohar: Rapid thermal annealing of polysilicon thin films, J. Microelectromech. Syst. 7, 356–364 (1998)
J. Yang, H. Kahn, A.-Q. He, S.M. Phillips, A.H. Heuer: A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: The multipoly process, J. Microelectromech. Syst. 9, 485–494 (2000)
T.J. Kang, H.Y. Lee, Y.H. Kim: Reduction of sheet resistance and low-thermal budget relaxation of stress gradients in polysilicon microcantilever beams using nickel-silicides, J. Microelectromech. Syst. 16, 279–288 (2007)
P. Gennissen, M. Bartek, P.J. French, P.M. Sarro: Bipolar-compatible epitaxial poly for smart sensors: Stress minimization and applications, Sens. Actuat. A62, 636–645 (1997)
P. Lange, M. Kirsten, W. Riethmuller, B. Wenk, G. Zwicker, J.R. Morante, F. Ericson, J.A. Schweitz: Thick polycrystalline silicon for surface-micromechanical applications: Deposition, structuring, and mechanical characterization, Sens. Actuat. A54, 674–678 (1996)
S. Greek, F. Ericson, S. Johansson, M. Furtsch, A. Rump: Mechanical characterization of thick polysilicon films: Young’s modulus and fracture strength evaluated with microstructures, J. Micromech. Microeng. 9, 245–251 (1999)
K. Funk, H. Emmerich, A. Schilp, M. Offenberg, R. Neul, F. Larmer: A surface micromachined silicon gyroscope using a thick polysilicon layer. In: Proc. 12th Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 1999) pp. 57–60
T. Abe, M.L. Reed: Low strain sputtered polysilicon for micromechanical structures. In: Proc. 9th Int. Workshop Microelectromech. Syst. (IEEE, Piscataway 1996) pp. 258–262
K. Honer, G.T.A. Kovacs: Integration of sputtered silicon microstructures with pre-fabricated CMOS circuitry, Sens. Actuat. A 91, 392–403 (2001)
J. Gaspar, T. Adrega, V. Chu, J.P. Conde: Thin-film paddle microresonators with high quality factors fabricated at temperatures below 110°C. In: Proc. 18th Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 2005) pp. 125–128
S.B. Patil, V. Chu, J.P. Conde: Surface micromachining of a thin film microresonator using dry decomposition of a polymer sacrificial layer, J. Vacuum Sci. Technol. B 25, 455–458 (2007)
R. Anderson, R.S. Muller, C.W. Tobias: Porous polycrystalline silicon: A new material for MEMS, J. Microelectromech. Syst. 3, 10–18 (1994)
W. Lang, P. Steiner, H. Sandmaier: Porous silicon: A novel material for microsystems, Sens. Actuat. A 51, 31–36 (1995)
R. He, C.J. Kim: On-chip hermetic packaging enabled by post-deposition electrochemical etching of polysilicon. In: Proc. 18th Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 2005) pp. 544–547
R. He, C.J. Kim: On-wafer monolithic encapsulation by surface micromachining with porous polysilicon shell, J. Microelectromech. Syst. 16, 462–472 (2007)
S.K. Ghandhi: VLSI Fabrication Principles – Silicon and Gallium Arsenide (Wiley, New York 1983)
W.A. Pilskin: Comparison of properties of dielectric films deposited by various methods, J. Vacuum Sci. Technol. 21, 1064–1081 (1977)
J.S. Danel, F. Michel, G. Delapierre: Micromachining of quartz and its application to an acceleration sensor, Sens. Actuat. A 21/23, 971–977 (1990)
A. Yasseen, J.D. Cawley, M. Mehregany: Thick glass film technology for polysilicon surface micromachining, J. Microelectromech. Syst. 8, 172–179 (1999)
R. Liu, M.J. Vasile, D.J. Beebe: The fabrication of nonplanar spin-on glass microstructures, J. Microelectromech. Syst. 8, 146–151 (1999)
B.A. Walmsley, Y.L. Liu, X.Z. Hu, M.B. Bush, J.M. Dell, L. Faraone: Poisson’s ratio of low-temperature PECVD silicon nitride thin films, J. Microelectromech. Syst. 16, 622–627 (2007)
B. Folkmer, P. Steiner, W. Lang: Silicon nitride membrane sensors with monocrystalline transducers, Sens. Actuat. A 51, 71–75 (1995)
M. Sekimoto, H. Yoshihara, T. Ohkubo: Silicon nitride single-layer X-ray mask, J. Vacuum Sci. Technol. 21, 1017–1021 (1982)
P.P. Tsai, I.-C. Chen, C.J. Ho: Ultralow power carbon monoxide microsensor by micromachining techniques, Sens. Actuat. B 76, 380–387 (2001)
P.J. French, P.M. Sarro, R. Mallee, E.J.M. Fakkeldij, R.F. Wolffenbuttel: Optimization of a low-stress silicon nitride process for surface micromachining applications, Sens. Actuat. A 58, 149–157 (1997)
B. Li, B. Xiong, L. Jiang, Y. Zohar, M. Wong: Germanium as a versatile material for low-temperature micromachining, J. Microelectromech. Syst. 8, 366–372 (1999)
A. Franke, D. Bilic, D.T. Chang, P.T. Jones, T.J. King, R.T. Howe, C.G. Johnson: Post-CMOS integration of germanium microstructures. In: Proc. 12th Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 1999) pp. 630–637
A.E. Franke, Y. Jiao, M.T. Wu, T.J. King, R.T. Howe: Post-CMOS modular integration of poly-SiGe microstructures using poly-Ge sacraficial layers. In: Tech. Digest – Solid State Sens. Actuat. Workshop (Transducers Research Foundation, Cleveland 2000) pp. 18–21
S. Sedky, P. Fiorini, M. Caymax, S. Loreti, K. Baert, L. Hermans, R. Mertens: Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications, J. Microelectromech. Syst. 7, 365–372 (1998)
S. Sedky, A. Witvrouw, K. Baert: Poly SiGe, a promising material for mems monolithic integration with the driving electronics, Sens. Actuat. A 97/98, 503–511 (2002)
C.W. Low, T.J.K. Liu, R. Howe: Characterization of polycrystalline silicon-germanium film deposition for modularly integrated MEMS applications, J. Microelectromech. Syst. 16, 68–77 (2007)
S. Sedky, A. Bayoumy, A. Alaa, A. Nagy, A. Witvrouw: Optimal conditions for micromachining Si1−xGex at 210∘C, J. Microelectromech. Syst. 16, 581–588 (2007)
J.M. Heck, C.G. Keller, A.E. Franke, L. Muller, T.-J. King, R.T. Howe: High aspect ratio polysilicon-germanium microstructures. In: Proc. 10th Int. Conf. Solid State Sens. Actuat. (Institute of Electrical Engineers of Japan, Tokyo 1999) pp. 328–334
P. Van Gerwen, T. Slater, J.B. Chevrier, K. Baert, R. Mertens: Thin-film boron-doped polycrystalline silicon70%-Germanium30% for Thermopiles, Sens. Actuat. A 53, 325–329 (1996)
D. Hyman, J. Lam, B. Warneke, A. Schmitz, T.Y. Hsu, J. Brown, J. Shaffner, A. Walson, R.Y. Loo, M. Mehregany, J. Lee: Surface micromachined RF MEMS switches on GaAs substrates, Int. J. Radio Freq. Microw. Commun. Eng. 9, 348–361 (1999)
C. Chang, P. Chang: Innovative micromachined microwave switch with very low insertion loss, Sens. Actuat. 79, 71–75 (2000)
A. Reddy, H. Kahn, A.H. Heuer: A MEMS-based evaluation of the mechanical properties of metallic thin films, J. Microelectromech. Syst. 16, 650–658 (2007)
M.F. Aimi, M.P. Rao, N.C. MacDonald, A.S. Zuruzi, D.P. Bothman: High-aspect-ratio bulk micromachining of Ti, Nat. Mater. 3, 103–105 (2004)
E.R. Parker, M.P. Rao, K.L. Turner, C.D. Meinhart, N.C. MacDonald: Bulk micromachined titanium microneedles, J. Microelectromech. Syst. 16, 289–295 (2007)
C.L. Shih, B.K. Lai, H. Kahn, S.M. Phillips, A.H. Heuer: A robust co-sputtering fabrication procedure for TiNi shape memory alloys for MEMS, J. Microelectromech. Syst. 10, 69–79 (2001)
G. Hahm, H. Kahn, S.M. Phillips, A.H. Heuer: Fully microfabricated silicon spring biased shape memory actuated microvalve. In: Proc. Solid State Sens. Actuat. Workshop (Transducers Research Foundation, San Diego 2000) pp. 230–233
S.D. Leith, D.T. Schwartz: High-rate through-mold electrodeposition of thick (> 200 micron) NiFe MEMS components with uniform composition, J. Microelectromech. Syst. 8, 384–392 (1999)
N. Rajan, M. Mehregany, C.A. Zorman, S. Stefanescu, T. Kicher: Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines, J. Microelectromech. Syst. 8, 251–257 (1999)
T. Pornsin-Sirirak, Y.C. Tai, H. Nassef, C.M. Ho: Titanium-alloy MEMS wing technology for a microaerial vehicle application, Sens. Actuat. A 89, 95–103 (2001)
C.R. Stoldt, C. Carraro, W.R. Ashurst, D. Gao, R.T. Howe, R. Maboudian: A low temperature CVD process for silicon carbide MEMS, Sens. Actuat. A 97/98, 410–415 (2002)
M. Eickhoff, H. Moller, G. Kroetz, J. von Berg, R. Ziermann: A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates, Sens. Actuat. 74, 56–59 (1999)
Y.T. Yang, K.L. Ekinci, X.M.H. Huang, L.M. Schiavone, M.L. Roukes, C.A. Zorman, M. Mehregany: Monocrystalline silicon carbide nanoelectromechanical systems, Appl. Phys. Lett. 78, 162–164 (2001)
D. Young, J.D. Du, C.A. Zorman, W.H. Ko: High-temperature single-crystal 3C-SiC capacitive pressure sensor, IEEE Sens. J. 4, 464–470 (2004)
C.A. Zorman, S. Rajgolpal, X.A. Fu, R. Jezeski, J. Melzak, M. Mehregany: Deposition of polycrystalline 3C-SiC films on 100 mm-diameter (100) Si wafers in a large-volume LPCVD furnace, Electrochem. Solid State Lett. 5, G99–G101 (2002)
L. Behrens, E. Peiner, A.S. Bakin, A. Schlachetzski: Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapor deposition, J. Micromech. Microeng. 12, 380–384 (2002)
C.A. Zorman, S. Roy, C.H. Wu, A.J. Fleischman, M. Mehregany: Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon, J. Mater. Res. 13, 406–412 (1996)
C.H. Wu, C.A. Zorman, M. Mehregany: Growth of polycrystalline SiC films on SiO2 and Si3N4 by APCVD, Thin Solid Films 355/356, 179–183 (1999)
P. Sarro: Silicon carbide as a new MEMS technology, Sens. Actuat. 82, 210–218 (2000)
N. Ledermann, J. Baborowski, P. Muralt, N. Xantopoulos, J.M. Tellenbach: Sputtered silicon carbide thin films as protective coatings for MEMS applications, Surf. Coatings Technol. 125, 246–250 (2000)
X.A. Fu, R. Jezeski, C.A. Zorman, M. Mehregany: Use of deposition pressure to control the residual stress in polycrystalline SiC films, Appl. Phys. Lett. 84, 341–343 (2004)
J. Trevino, X.A. Fu, M. Mehregany, C. Zorman: Low-stress, heavily-doped polycrystalline silicon carbide for MEMS applications. In: Proc. 18th Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 2005) pp. 451–454
R.S. Okojie, A.A. Ned, A.D. Kurtz: Operation of a 6H-SiC pressure sensor at 500∘C, Sens. Actuat. A 66, 200–204 (1998)
K. Lohner, K.S. Chen, A.A. Ayon, M.S. Spearing: Microfabricated silicon carbide microengine structures, Mater. Res. Soc. Symp. Proc. 546, 85–90 (1999)
K.O. Min, S. Tanaka, M. Esashi: Micro/nano glass press molding using silicon carbide molds fabricated by silicon lost molding. In: Proc. 18th Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 2005) pp. 475–478
S. Tanaka, S. Sugimoto, J.-F. Li, R. Watanabe, M. Esashi: Silicon carbide micro-reaction-sintering using micromachined silicon molds, J. Microelectromech. Syst. 10, 55–61 (2001)
L.A. Liew, W. Zhang, V.M. Bright, A. Linan, M.L. Dunn, R. Raj: Fabrication of SiCN ceramic MEMS using injectable polymer-precursor technique, Sens. Actuat. A 89, 64–70 (2001)
A.J. Fleischman, S. Roy, C.A. Zorman, M. Mehregany: Polycrystalline silicon carbide for surface micromachining. In: Proc. 9th Int. Workshop Microelectromech. Syst. (IEEE, Piscataway 1996) pp. 234–238
A.J. Fleischman, X. Wei, C.A. Zorman, M. Mehregany: Surface micromachining of polycrystalline SiC deposited on SiO2 by APCVD, Mater. Sci. Forum 264–268, 885–888 (1998)
G. Beheim, C.S. Salupo: Deep RIE process for silicon carbide power electronics and MEMS, Mater. Res. Soc. Symp. Proc. 622, T8.8.1–T8.8.6 (2000)
W.N. Sharpe, G.M. Beheim, L.J. Evans, N.N. Nemeth, O.M. Jadaan: Fracture strength of single-crystal silicon carbide microspecimens at 24∘C and 1000∘C, J. Microelectromech. Syst. 17, 244–254 (2008)
A. Yasseen, C.H. Wu, C.A. Zorman, M. Mehregany: Fabrication and testing of surface micromachined polycrystalline SiC micromotors, Electron Dev. Lett. 21, 164–166 (2000)
X. Song, S. Rajgolpal, J.M. Melzak, C.A. Zorman, M. Mehregany: Development of a multilayer sic surface micromachining process with capabilities and design rules comparable with conventional polysilicon surface micromachining, Mater. Sci. Forum 389–393, 755–758 (2001)
D. Gao, R.T. Howe, R. Maboudian: High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma, Appl. Phys. Lett. 82, 1742–1744 (2004)
D. Gao, M.B. Wijesundara, C. Carraro, R.T. Howe, R. Maboudian: Recent progress toward and manufacturable polycrystalline SiC surface micromachining technology, IEEE Sens. J. 4, 441–448 (2004)
X.M.H. Huang, C.A. Zorman, M. Mehregany, M.L. Roukes: Nanodevice motion at microwave frequenies, Nature 421, 496 (2003)
T. Shibata, Y. Kitamoto, K. Unno, E. Makino: Micromachining of diamond film for MEMS applications, J. Microelectromech. Syst. 9, 47–51 (2000)
H. Bjorkman, P. Rangsten, P. Hollman, K. Hjort: Diamond replicas from microstructured silicon masters, Sens. Actuat. 73, 24–29 (1999)
P. Rangsten, H. Bjorkman, K. Hjort: Microfluidic components in diamond. In: Proc. 10th Int. Conf. Solid State Sens. Actuat. (Institute of Electrical Engineers of Japan, Tokyo 1999) pp. 190–193
H. Bjorkman, P. Rangsten, K. Hjort: Diamond microstructures for optical microelectromechanical systems, Sens. Actuat. 78, 41–47 (1999)
M. Aslam, D. Schulz: Technology of diamond microelectromechanical systems. In: Proc. 8th Int. Conf. Solid State Sens. Actuat. (IEEE, Piscataway 1995)
R. Ramesham: Fabrication of diamond microstructures for microelectromechanical systems (MEMS) by a surface micromachining process, Thin Solid Films 340, 1–6 (1999)
Y. Yang, X. Wang, C. Ren, J. Xie, P. Lu, W. Wang: Diamond surface micromachining technology, Diam. Relat. Mater. 8, 1834–1837 (1999)
X.D. Wang, G.D. Hong, J. Zhang, B.L. Lin, H.Q. Gong, W.Y. Wang: Precise patterning of diamond films for MEMS application, J. Mater. Process. Technol. 127, 230–233 (2002)
J. Wang, J.E. Butler, D.S.Y. Hsu, C.T.C. Nguyen: CVD polycrystalline diamond high-Q micromechanical resonators. In: Proc. 15th Int. Conf. Micrelectromech. Syst. (IEEE, Piscataway 2001) pp. 657–660
J. Wang, J.E. Butler, T. Feygelson, C.T.C. Nguyen: 1.51 GHz nanocrystalline diamond micromechanical disk resonator with material mismatched isolating support. In: Proc. 17th IEEE Int. Conf. Microelectromech. Syst. (IEEE, Piscataway 2004) pp. 641–644
N. Sepulveda, D. Aslam, J.P. Sullivan: Polycrystalline diamond MEMS resonator technology for sensor applications, Diam. Relat. Mater. 15, 398–403 (2006)
L. Sekaric, J.M. Parpia, H.G. Craighead, T. Feygelson, B.H. Houston, J.E. Butler: Nanomechanical resonant structures in nanocrystalline diamond, Appl. Phys. Lett. 81, 4455–4457 (2002)
A.R. Krauss, O. Auciello, D.M. Gruen, A. Jayatissa, A. Sumant, J. Tucek, D.C. Mancini, N. Moldovan, A. Erdemire, D. Ersoy, M.N. Gardos, H.G. Busmann, E.M. Meyer, M.Q. Ding: Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices, Diam. Relat. Mater. 10, 1952–1961 (2001)
X. Xiao, J. Birrell, J.E. Gerbi, O. Auciello, J.A. Carlisle: Low temperature growth of ultrananocrystalline diamond, J. Appl. Phys. 96, 2232–2239 (2004)
S. Srinivasan, J. Hiller, B. Kabius, O. Auciello: Piezoelectric/untrananocrytalline diamond heterostructures for high-performance multifunctional micro/nanoelectromechanical systems, Appl. Phys. Lett. 90, 134101-1–134101-3 (2007)
H.D. Espinosa, B. Peng, N. Moldovan, T.A. Friedmann, X. Xiao, D.C. Mancini, O. Auciello, J. Carlisle, C.A. Zorman, M. Mehregany: Elasticity, strength and toughness of single-crystal silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amporphous carbon, Appl. Phys. Lett. 89, 073111-1–073111-3 (2006)
X. Xiao, J. Wang, C. Liu, J.A. Carlisle, B. Mech, R. Greenberg, D. Guven, R. Freda, M.S. Humayun, J. Weiland, O. Auciello: In vitro and in vivo evaluation of ultrananocrystalline diamond for coating of implantable retinal microchips, J. Biomed. Mater. Res. B 77B, 273–281 (2006)
F.J. Hernandez-Guillen, K. Janischowsky, W. Ebert, E. Kohn: Nanocrystalline diamond films for mechanical applications, Phys. Stat. Solidi (a) 201, 2553–2557 (2004)
T.A. Friedmann, J.P. Sullivan, J.A. Knapp, D.R. Tallant, D.M. Follstaedt, D.L. Medlin, P.B. Mirkarimi: Thick stress-free amorphous-tetrahedral carbon films with hardness near that of diamond, Appl. Phys. Lett. 71, 3820–3822 (1997)
J.P. Sullivan, T.A. Friedmann, K. Hjort: Diamond and amorphous carbon MEMS, MRS Bull. 26, 309–311 (2001)
J.R. Webster, C.W. Dyck, J.P. Sullivan, T.A. Friedmann, A.J. Carton: Performance of amorphous diamond RF MEMS capacitive switch, Electron. Lett. 40, 43–44 (2004)
K. Hjort, J. Soderkvist, J.-A. Schweitz: Galium arsenide as a mechanical material, J. Micromech. Microeng. 4, 1–13 (1994)
K. Hjort: Sacrificial etching of III-V compounds for micromechanical devices, J. Micromech. Microeng. 6, 370–365 (1996)
K. Fobelets, R. Vounckx, G. Borghs: A GaAs pressure sensor based on resonant tunnelling diodes, J. Micromech. Microeng. 4, 123–128 (1994)
A. Dehe, K. Fricke, K. Mutamba, H.L. Hartnagel: A piezoresistive GaAs pressure sensor with GaAs/AlGaAs membrane technology, J. Micromech. Microeng. 5, 139–142 (1995)
A. Dehe, K. Fricke, H.L. Hartnagel: Infrared thermopile sensor based on AlGaAs-GaAs micromachining, Sens. Actuat. A 46/47, 432–436 (1995)
A. Dehe, J. Peerlings, J. Pfeiffer, R. Riemenschneider, A. Vogt, K. Streubel, H. Kunzel, P. Meissner, H.L. Hartnagel: III-V compound semiconductor micromachined actuators for long resonator tunable fabry-perot detectors, Sens. Actuat. A 68, 365–371 (1998)
T. Lalinsky, S. Hascik, Z. Mozolova, E. Burian, M. Drzik: The improved performance of GaAs micromachined power sensor microsystem, Sens. Actuat. 76, 241–246 (1999)
T. Lalinsky, E. Burian, M. Drzik, S. Hascik, Z. Mozolova, J. Kuzmik, Z. Hatzopoulos: Performance of GaAs micromachined microactuator, Sens. Actuat. 85, 365–370 (2000)
H.X. Tang, X.M.H. Huang, M.L. Roukes, M. Bichler, W. Wegscheider: Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems, Appl. Phys. Lett. 81, 3879–3881 (2002)
T.S. Tighe, J.M. Worlock, M.L. Roukes: Direct thermal conductance measurements on suspended monocrystalline nanostructures, Appl. Phys. Lett. 70, 2687–2689 (1997)
J. Miao, B.L. Weiss, H.L. Hartnagel: Micromachining of three-dimensional GaAs membrane structures using high-energy nitrogen implantation, J. Micromech. Microeng. 13, 35–39 (2003)
C. Seassal, J.L. Leclercq, P. Viktorovitch: Fabrication of InP-based freestanding microstructures by selective surface micromachining, J. Micromech. Microeng. 6, 261–265 (1996)
J. Leclerq, R.P. Ribas, J.M. Karam, P. Viktorovitch: III-V micromachined devices for microsystems, Microelectron. J. 29, 613–619 (1998)
H. Yamaguchi, R. Dreyfus, S. Miyashita, Y. Hirayama: Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(111)A heteroepitaxial systems, Physica E 13, 1163–1167 (2002)
K. Deng, P. Kumar, L. Li, D.L. Devoe: Piezoelectric disk resonators based on epitaxial AlGaAs films, J. Microelectromech. Syst. 16, 155–162 (2007)
C. Lee, T. Itoh, T. Suga: Micromachined piezoelectric force sensors based on PZT thin films, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 43, 553–559 (1996)
B. Xu, L.E. Cross, J.J. Bernstein: Ferroelectric and antiferroelectric films for microelectromechanical systems applications, Thin Solid Films 377/378, 712–718 (2000)
E. Hong, S. Trolier-McKinstry, R.L. Smith, S.V. Krishnaswamy, C.B. Freidhoff: Design of MEMS PZT circular diaphragm actuators to generate large deflections, J. Microelectromech. Syst. 15, 832–839 (2006)
S.P. Beeby, A. Blackburn, N.M. White: Processing of PZT piezoelectric thick films on silicon for microelectromechanical systems, J. Micromech. Microeng. 9, 218–229 (1999)
K. Tonisch, C. Buchheim, F. Niebelschütz, M. Donahue, R. Goldhahn, V. Cimalla, O. Ambacher: Piezoelectric actuation of all-nitride MEMS, Phys. Stat. Solidi (c) 5, 1910–1913 (2008)
C. Giordano, I. Ingrosso, M.T. Todaro, G. Maruccio, S. De Guido, R. Cingolani, A. Passaseo, M. De Vittorio: AlN on polysilicon piezoelectric cantilevers for sensors/actuators, Microelectron. Eng. 86, 1204–1207 (2009)
M. Schneider, A. Bittner, U. Schmid: Thickness dependence of Young’s modulus and residual stress of sputtered aluminum nitride thin films, Appl. Phys. Lett. 105, 201912 (2014)
G. Piazza, P.J. Stephanou, A.P. Pisano: Piezoelectric aluminum nitride vibrating contour-mode MEMS resonators, J. Microelectromech. Syst. 15, 1406–1418 (2006)
N. Sinha, G.E. Wabiszewski, R. Mahameed, V.V. Felmetsger, S.M. Tanner, R.W. Carpick, G. Piazza: Piezoelectric aluminum nitride nanoelectromechanical actuators, Appl. Phys. Lett. 95, 053106 (2009)
R.B. Karabalin, M.H. Matheny, X.L. Feng, E. Defaÿ, G. Le Rhun, C. Marcoux, S. Hentz, P. Andreucci, M.L. Roukes: Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films, Appl. Phys. Lett. 95, 103111 (2009)
P. Ramesh, S. Krishnamoorthy, S. Rajan, G.N. Washington: Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications, Smart Mater. Struct. 21, 094003 (2012)
J. Lv, Z. Yang, G. Member: Yan, W. Lin, Y. Cai, B. Zhang, K.J. Chen: Fabrication of large-area suspended MEMS structures using GaN-on-Si platform, IEEE Electr. Dev. Lett. 30, 1045–1047 (2009)
M. Rais-Zadeh, V.J. Gokhale, A. Ansari, M. Faucher, D. Théron, Y. Cordier, L. Buchaillot: Gallium nitride as an electromechanical material, J. Microelectromech. Syst. 23, 1252–1271 (2014)
A.B. Amar, M. Faucher, V. Brandli, Y. Cordier, D. Théron: Young’s modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application, Phys. Stat. Solidi (a) 211, 1655–1659 (2014)
T. Zimmermann, M. Neuburger, P. Benkart, F.J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, E. Kohn: Piezoelectric GaN sensor structures, IEEE Electron Dev. Lett. 27, 309–312 (2006)
C. Shearwood, M.A. Harradine, T.S. Birch, J.C. Stevens: Applications of polyimide membranes to MEMS technology, Microelectron. Eng. 30, 547–550 (1996)
F. Jiang, G.B. Lee, Y.C. Tai, C.M. Ho: A flexible micromachine-based shear-stress sensor array and its application to separation-point detection, Sens. Actuat. 79, 194–203 (2000)
H. Yousef, K. Hjort, M. Lindberg: Vertical thermopiles embedded in a polyimide-based flexible printed circuit board, J. Microelectromech. Syst. 16, 1341–1348 (2007)
D. Memmi, V. Foglietti, E. Cianci, G. Caliano, M. Pappalardo: Fabrication of capacitive micromechanical ultrasonic transducers by low-temperature process, Sens. Actuat. A 99, 85–91 (2002)
A. Bagolini, L. Pakula, T.L.M. Scholtes, H.T.M. Pham, P.J. French, P.M. Sarro: Polyimide sacrificial layer and novel materials for post-processing surface micromachining, J. Micromech. Microeng. 12, 385–389 (2002)
T. Stieglitz: Flexible biomedical microdevices with double-sided electrode arrangements for neural applications, Sens. Actuat. A 90, 203–211 (2001)
T. Stieglitz, G. Matthias: Flexible BioMEMS with electrode arrangements on front and back side as key component in neural prostheses and biohybrid systems, Sens. Actuat. B 83, 8–14 (2002)
T. Stieglitz, M. Schuettler, K.P. Koch: Implantable Biomedical Microsystems for neural prostheses, IEEE Eng. Med. Biol. 24, 58–65 (2005)
H. Lorenz, M. Despont, N. Fahrni, J. Brugger, P. Vettiger, P. Renaud: High-aspect-ratio, ultrathick, negative-tone-near-UV photoresist and its applications in MEMS, Sens. Actuat. A 64, 33–39 (1998)
H. Lorenz, M. Despont, N. Fahrni, N. LaBianca, P. Renaud, P. Vettiger: SU-8: A low-cost negative resist for MEMS, J. Micromech. Microeng. 7, 121–124 (1997)
E.H. Conradie, D.F. Moore: SU-8 thick photoresist processing as a functional material for MEMS applications, J. Micromech. Microeng. 12, 368–374 (2002)
C.T. Pan, H. Yang, S.C. Shen, M.C. Chou, H.P. Chou: A low-temperature wafer bonding technique using patternable materials, J. Micromech. Microeng. 12, 611–615 (2002)
P.A. Stupar, A.P. Pisano: Silicon, parylene, and silicon/parylene micro-needles for strength and toughness. In: Tech. Digest 11th Int. Conf. Solid State Sens. Actuat. (IEEE, Piscataway 2001) pp. 1368–1389
X. Yang, J.M. Yang, Y.C. Tai, C.M. Ho: Micromachined membrane particle filters, Sens. Actuat. 73, 184–191 (1999)
J.M. Zara, S.W. Smith: Optical scanner using a MEMS actuator, Sens. Actuat. A 102, 176–184 (2002)
H.S. Noh, P.J. Hesketh, G.C. Frye-Mason: Parylene gas chromatographic column for rapid thermal cycling, J. Microelectromech. Syst. 11, 718–725 (2002)
Y. Suzuki, Y.C. Tai: Micromachined high aspect ratio parylene spring and its application to low frequency accelerometers, J. Microelectromech. Syst. 15, 1364–1370 (2006)
T.J. Yao, X. Yang, Y.C. Tai: BrF3 dry release technology for large freestanding parylene microstructures and electrostatic actuators, Sens. Actuat. A 97/98, 771–775 (2002)
P.-J. Chen, D.C. Rodger, E.M. Meng, M.S. Humayun, Y.C. Tai: Surface-micromachined parylene dual valves for on-chip unpowered microflow regulation, J. Microelectromech. Syst. 16, 223–231 (2007)
D.C.Y.C. Rodger: Tai: Microelectronic packaging for retinal prosthesis, IEEE Eng. Med. Biol. 24, 52–57 (2005)
D. Ziegler, T. Suzuki, S. Takeuchi: Fabrication of flexible neural probes with built-in microfluidic channels by thermal bonding of parylene, J. Microelectromech. Syst. 15, 1477–1482 (2006)
X. Wang, J. Engel, C. Liu: Liquid crystal polymer (LCP) for MEMS: Processing and applications, J. Micromech. Microeng. 13, 628–633 (2003)
C.J. Lee, S.J. Oh, J.K. Song, S.J. Kim: Neural signal recording using microelectrode arrays fabricated on liquid crystal polymer material, Mater. Sci. Eng. C 4, 265–268 (2004)
F.F. Faheem, K.C. Gupta, Y.C. Lee: Flip-chip assembly and liquid crystal polymer encapsulation for variable MEMS capacitors, IEEE Trans. Microw. Theory Tech. 51, 2562–2567 (2003)
J.N. Palasagaram, R. Ramadoss: MEMS-capacitive pressure sensor fabricated using printed-circuit-processing techniques, IEEE Sens. J. 6, 1374–1375 (2006)
Acknowledgements
Prof. Zorman thanks Prof. Mehran Mehregany of Case Western Reserve University for his numerous contributions to this manuscript.
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 2017 Springer-Verlag GmbH Germany
About this chapter
Cite this chapter
Zorman, C.A. (2017). Materials Aspects of Micro- and Nanoelectromechanical Systems. In: Bhushan, B. (eds) Springer Handbook of Nanotechnology. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-54357-3_7
Download citation
DOI: https://doi.org/10.1007/978-3-662-54357-3_7
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-54355-9
Online ISBN: 978-3-662-54357-3
eBook Packages: EngineeringEngineering (R0)