InGaN

Abstract

During the 1980s lattice matching between epitaxial layer and substrate was said to be the most important point in heteroepitaxial growth. This section describes lattice matching. At the time of these discussions in the 1980s it was not often possible to achieve good crystal quality and so the devices were thought to have a short lifetime if a large lattice mismatch existed between epitaxial layer and substrate. Therefore, considerable research effort was directed towards the elimination of the lattice mismatch between epitaxial layers and substrate. Consequently, researchers in the field of blue LEDs and laser diodes (LDs) concentrated on the ZnSe system because the lattice mismatch is small if GaAs substrates are used.