Abstract
Defect states and band states, band tailing is discussed. Disorder effects in semiconductor alloys are elaborated. Impurity influence on fundamental absorption with heavy doping, and shrinking of the band gap is shown. The Burstein-Moss effect is discussed.
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Notes
- 1.
For a self-consistent determination of the screening, which depends on the carrier density, which in turn depends on the level density, which again is influenced by the screening length—see Hwang and Brews (1971).
- 2.
For instance, in InSb with m n =0.0116, the effective density of states is N c ≅3⋅1016 cm−3; hence doping with a shallow donor density in excess of 1017 cm−3 will cause a significant filling of conduction band states.
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Böer, K.W. (2013). Defect States and Band States. In: Handbook of the Physics of Thin-Film Solar Cells. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36748-9_12
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