Landolt-Börnstein - Group III Condensed Matter

CdTe: defect formation energies, entropy of point defects, migration energy

Abstract

This document is part of Volume 44 ‘Semiconductors’, Subvolume B ‘New Data and Updates for II-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on CdTe (cadmium telluride), Element System Cd-Te.

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Title
CdTe: defect formation energies, entropy of point defects, migration energy
Book Title
Semiconductors
In
Data extract from Landolt-Börnstein III/44B: Semiconductors – New Data and Updates for II-VI Compounds
Book DOI
10.1007/978-3-540-74392-7
Chapter DOI
10.1007/978-3-540-74392-7_83
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44B
Editors
  • U. Roessler Send Email (10)
Editor Affiliation
  • 10 Institut für Theoretische Physik, Universitaet Regensburg, 93040, Regensburg, Germany
Authors
  • J. Gutowski Send Email (5_83)
  • K. Sebald Send Email (6_83)
  • T. Voss Send Email (7_83)
Author Affiliation
  • 5_83 University of Bremen, Institute of Solid State Physics - Semiconductor Optics, Otto-Hahn-Allee, 28359, Bremen, Germany
  • 6_83 University of Bremen, Institute of Solid State Physics - Semiconductor Optics, Otto-Hahn-Allee, 28359, Bremen, Germany
  • 7_83 University of Bremen, Institute of Solid State Physics - Semiconductor Optics, Otto-Hahn-Allee, 28359, Bremen, Germany

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