Abstract
Here we report on high field transport in GaN and GaN field effect devices, based on the rigid-ion model of the electron-phonon interaction within the Cellular Monte Carlo (CMC) approach, including quantum- mechanical effects. The calculated velocity is compared with experimental data from pulsed I–V measurements, where good agreement with experiment is found. We have applied the CMC transport kernel above to the simulation of the DC and high frequency characteristics of GaN MESFETs and AlGaN/GaN HFET devices. Various effects are considered, such as thermal heating and nonequilibrium phonons, in comparing with the dc and high frequency behavior of these devices.
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© 2006 Springer-Berlag Berlin Heidelberg
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Yamakawa, S., Branlard, J., Saraniti, M., Goodnick, S.M. (2006). High Field Transport in GaN and AlGaN/GaN Heterojunction Field Effect Transistors. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_29
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DOI: https://doi.org/10.1007/978-3-540-36588-4_29
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