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Band Gap Engineering of CdTe Quantum Dots by Hg Alloying in Infrared Region

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The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

We synthesized Hg alloyed CdTe quantum dots (Cd1−xHgxTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd1−xHgxTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd0.5Hg0.5Te.

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Acknowledgements

Authors acknowledge DST for financial assistance through project DST/INT/ISR/P-12/2014.

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Authors and Affiliations

  1. Center for System Science, Indian Institute of Technology Jodhpur, Jodhpur, 342011, India

    Anurag Sahu

  2. Department of Chemistry, Centre for Nanotechnology & Advanced Materials, Bar-Ilan University, 52900, Ramat Gan, Israel

    Shay Tirosh & Arie Zaban

  3. Department of Mathematics, Indian Institute of Technology Jodhpur, Jodhpur, 342011, India

    Kirankumar Hiremath

  4. Department of Physics and Center for Solar Energy, Indian Institute of Technology Jodhpur, Jodhpur, 342011, India

    Ambesh Dixit

Authors
  1. Anurag Sahu
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  2. Shay Tirosh
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  3. Arie Zaban
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  4. Kirankumar Hiremath
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  5. Ambesh Dixit
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Corresponding author

Correspondence to Ambesh Dixit .

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Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Sahu, A., Tirosh, S., Zaban, A., Hiremath, K., Dixit, A. (2019). Band Gap Engineering of CdTe Quantum Dots by Hg Alloying in Infrared Region. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_187

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