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Reliability of GaN-Based Power Devices

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Book cover Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Part of the book series: Integrated Circuits and Systems ((ICIR))

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Abstract

No new product is possible without reliability: this is especially true for new and emerging technology, such as gallium nitride-based devices. For GaN power transistors, breakdown mechanisms play a significant role. The reduction of the robustness and of the long-term reliability still represents a serious issue that must be taken into consideration. The first part of the chapter deals with the above mentioned aspects and mainly focuses on the permanent degradation induced in GaN-based devices by off-state time-dependent mechanisms.

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Authors and Affiliations

  1. Department of Information Engineering, University of Padova - DEI, Padova, Padova, Italy

    Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin & Isabella Rossetto

Authors
  1. Gaudenzio Meneghesso
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  2. Enrico Zanoni
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  3. Matteo Meneghini
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  4. Maria Ruzzarin
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  5. Isabella Rossetto
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Editors and Affiliations

  1. Department of Information Engineering, University of Padova - DEI, Padova, Padova, Italy

    Gaudenzio Meneghesso

  2. Department of Information Engineering, University of Padova - DEI, Padova, Padova, Italy

    Matteo Meneghini

  3. Department of Information Engineering, University of Padova - DEI, Padova, Padova, Italy

    Enrico Zanoni

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Meneghesso, G., Zanoni, E., Meneghini, M., Ruzzarin, M., Rossetto, I. (2018). Reliability of GaN-Based Power Devices. In: Meneghesso, G., Meneghini, M., Zanoni, E. (eds) Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Integrated Circuits and Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-77994-2_4

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  • DOI: https://doi.org/10.1007/978-3-319-77994-2_4

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-77993-5

  • Online ISBN: 978-3-319-77994-2

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