Abstract
Hall-effect sensors are commonly used in many industrial applications as position detectors, incremental counters and sensing elements of DC current transformers. Previously developed Hall-effect sensors utilize InAs or InSb as a sensing material. Recently, graphene seems to be the most promising material. Monolayer graphene was grown using the Chemical Vapor Deposition (CVD) method on the substrates. Prior to the growth, in situ etching of the SiC surface was carried out in hydrogen atmosphere. Functional properties of developed Hall-effect sensors based on graphene were tested on special experimental setup. Results presented in the paper indicate, that graphene is very promising material for development of Hall-effect sensors. Such sensors exhibit high magnetic field sensitivity and linear characteristic. It was also observed, that functional parameters of graphene Hall-effect sensors are diversified from the point of view of its transport properties. This phenomenon creates important possibilities of further optimization of Hall-effect sensors during their production.
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This work was partially supported by The National Center of Research and Development (Poland) within GRAF-TECH program.
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Petruk, O., Kachniarz, M., Szewczyk, R., Bieńkowski, A. (2017). Investigation on Functional Properties of Hall-Effect Sensor Made of Graphene. In: Szewczyk, R., Kaliczyńska, M. (eds) Recent Advances in Systems, Control and Information Technology. SCIT 2016. Advances in Intelligent Systems and Computing, vol 543. Springer, Cham. https://doi.org/10.1007/978-3-319-48923-0_73
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DOI: https://doi.org/10.1007/978-3-319-48923-0_73
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