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Hydrogenated Amorphous Silicon TFT Technology and Architecture

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Introduction to Thin Film Transistors

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Abstract

Hydrogenated amorphous silicon TFTs are the work-horse of the active matrix flat panel display industry, and the architecture and fabrication processes of these devices are described in this chapter. The properties of a-Si:H, including its meta-stability, are briefly summarised as background to later sections, which include a description of the inverted staggered device architecture, and a consideration of TFT layout issues. The semiconductor and dielectric layers in the TFT are deposited by plasma enhanced chemical vapour deposition, PECVD, and the current implementation and understanding of these processes are presented. Finally, some novel a-Si:H TFT structures are described, including self-aligned and short channel TFTs, as well as high stability devices deposited under conditions of enhanced hydrogen dilution of the PECVD reactant gases.

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  1. TFT Consultant, Forest Row, E. Sussex, UK

    S. D. Brotherton

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Brotherton, S.D. (2013). Hydrogenated Amorphous Silicon TFT Technology and Architecture. In: Introduction to Thin Film Transistors. Springer, Heidelberg. https://doi.org/10.1007/978-3-319-00002-2_5

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