Abstract
The use of 18O tracing to investigate atomic transport mechanisms during oxide growth is described. Experimental results for thermal oxidation of silicon are presented and discussed. It is shown that the growth in pure water vapor occurs by an interstitial diffusion of water molecules reacting with the silica network. It is shown that the growth in dry oxygen exhibits two main features:
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an interstitial transport of 02, which is largely dominant for thick oxide films
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step by step motion of network oxygen atoms whose contribution increases as oxide thickness decreases.
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© 1988 Springer Science+Business Media New York
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Rico, S. (1988). Si Oxidation Mechanisms as Studied by Oxygen Tracer Methods. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_8
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_8
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