Abstract
The application of a UHV deposition and surface analysis facility to the fabrication of high-transition-temperature superconducting films for studies of epitaxial growth and development of refractory tunnel junctions is discussed. A description is given of the vacuum system with some detail of the chambers used for co-evaporation and reactive dc magnetron sputtering. Specific examples presented to illustrate the effect of MBE-like deposition conditions, and the role of RHEED, XPS, and, to a lesser extent, other surface-sensitive probes, are: (a) the preparation of clean and damage-free sapphire and Nb3Ir substrates, (b) the epitaxial relationships in a number of superconductor-insulator systems such as sapphire and NbN, Nb3Sn, and Mo-Re, (c) the development of CaF2 and ion-beam oxidized Al and Mg tunnel barriers, and (d) the deposition of refractory counterelectrodes. Correlations are made with tunneling characteristics for appropriate examples.
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© 1986 Plenum Press, New York
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Talvacchio, J., Janocko, M.A., Gavaler, J.R., Braginski, A.I. (1986). UHV Deposition and In-Situ Analysis of Thin-Film Superconductors. In: Reed, R.P., Clark, A.F. (eds) Advances in Cryogenic Engineering Materials . Advances in Cryogenic Engineering Materials , vol 32. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-9871-4_63
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DOI: https://doi.org/10.1007/978-1-4613-9871-4_63
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