Summary
To study the basis of dopant contrast in secondary electron (SE) imaging in the scanning electron microscope (SEM), we have performed experiments to show the dependence of the dopant contrast on the surface charges, and have used computer modelling to investigate the effects of surface states and doping concentrations on the surface band bending and external patch fields. We have tested the validity of our calculations against experimentally measured SE energy spectra and derived a density of surface states in silicon of 1–3×1012 cm−2. The method described in this paper will help to enable the accurate quantification of dopant mapping of semiconductors in the SEM.
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Chee, K.W.A., Rodenburg, C., Humphreys, C.J. (2008). Quantitative Dopant Profiling in the SEM Including Surface States. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_88
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_88
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