In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is necessary. Recent results on mHEMT and pHEMT multifunctional receiver/transmitters utilizing are reported. The building blocks for highly integrated millimeterwave front-end circuits based on III-V-technologies such as mixers, amplifiers, frequency multipliers, and VCOs are presented in this work. Balanced and single ended 7–28 GHz MMIC frequency multipliers are described and compared. Multifunctional MMICs utilizing single ended, subharmonically pumped, balanced and single sideband mixers are reported. Examples of multi-stage mHEMT and pHEMT wideband amplifier for example covering 43-64 GHz with a gain of 24 dB, a minimum noise figure of 2.5 dB and ripple of 2 dB are shown.
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© 2008 Springer Science + Business Media B.V
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Zirath, H. et al. (2008). Integrated Frontends for Millimeterwave Applications Using III-V Technologies. In: Casier, H., Steyaert, M., Van Roermund, A.H.M. (eds) Analog Circuit Design. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8263-4_17
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DOI: https://doi.org/10.1007/978-1-4020-8263-4_17
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