Abstract
NbGe2 thin films and hot pressed powder samples were made over a wide range of preparation conditions. Resistive and inductiveT c values, residual resistance ratios, specific resistances, and grain sizes were determined as a function of the substrate temperature during evaporation. C40-NbGe2 thin films have a maximum resistiveT c of 2.18 K and an inductiveT c of 2.10 K. The maximum residual resistance ratio was 17.7, the lowest specific resistance at room temperature was 57 µΩ-cm. During formation at higher temperatures or under pressure NbGe2 has an affinity for carbon and nitrogen, leading to the formation of niobium carbonitrides with aT c up to 16.2 K. PublishedT c values up to 16 K for NbGe2 are probably due to a contamination with niobium carbonitride.
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Kloska, M., Haase, E.L. Investigation of the hexagonal NbGe2 phase. J Low Temp Phys 54, 267–275 (1984). https://doi.org/10.1007/BF00683278
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DOI: https://doi.org/10.1007/BF00683278