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Electronic properties of transition-metal dichalcogenides

  • 2D layered transition-metal dichalcogenides
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Abstract

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are an example of other materials that are now vying for the attention of the materials research community. In this article, the current state of quantum-theoretical calculations of the electronic and mechanical properties of semiconducting TMDC materials are presented. In particular, the intriguing interplay between external parameters (electric field, strain) and band structure, as well as the basic properties of heterostructures formed by vertical stacking of different 2D TMDCs are reviewed. Electrical measurements of MoS2, WS2, and WSe2 and their heterostructures, starting from simple field-effect transistors to more demanding logic circuits, high-frequency transistors, and memory devices, are also presented.

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Acknowledgements

This work was financially supported by the European Research Council (grants no. 240076 & no. 256962), Marie Curie ITN network “MoWSeS” (grant no. 317451), the Swiss National Science Foundation (grants no. 132102 and 138237), Swiss SNF Sinergia Grant no. 147607, and Deutsche Forschungsgemeinschaft (HE 3543/19–1).

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Authors and Affiliations

  1. Jacobs University Bremen, Germany

    Agnieszka Kuc

  2. Jacobs University Bremen, Germany

    Thomas Heine

  3. École Polytechnique Fédérale de Lausanne, Switzerland

    Andras Kis

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Kuc, A., Heine, T. & Kis, A. Electronic properties of transition-metal dichalcogenides. MRS Bulletin 40, 577–584 (2015). https://doi.org/10.1557/mrs.2015.143

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