Abstract
A method and algorithm to determine the pinching voltage of current in powerful bipolar radiofrequency and microwave transistors are described, based on using the dependence of a variable component of voltage on the emitter junction of the transistor on the collector voltage without the use of the “hot spot” mode. The errors in determining the voltage of pinching are given, and the results of testing the method using serial devices are presented.
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Original Russian Text © V.A. Sergeev, A.A. Kulikov, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2014, No. 4(108), pp. 46–53.
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Sergeev, V.A., Kulikov, A.A. Nondestructive method for determining the voltage of current pinching in powerful radiofrequency and microwave bipolar transistors. Russ Microelectron 44, 473–477 (2015). https://doi.org/10.1134/S106373971507015X
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DOI: https://doi.org/10.1134/S106373971507015X