Abstract
Spectrums of the thermal radiation of silicon monocrystals that are heated by a continuous laser beam (wavelength of 1.064 μm) are recorded within the wavelength range λ = 200–2500 nm. Silicon temperatures are determined within the interval T = 900–1700 K using the spectral pyrometry. The processing of a sequence of spectrums recorded with the frequency 100–1000 Hz allows the evolution of the crystal temperature to be restored during laser heating in the case when heating rates are sufficiently small. Peculiarities of different spectral intervals are discussed as applied to the problem of measuring the silicon temperature. During the laser heating of silicon, the temperature of a surface layer is shown to be heterogeneous with respect to depth, which is manifested in differences between average values calculated using thermal radiation spectrums and the surface temperature.
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References
Adams B.E., Schietinger C.W., and Kreider K.G., Radiation thermometry in the semiconductor industry, in Radiometric Temperature Measurements II: Applications, Zhang, Z.M., Tsai, B.K., and Machin, G., Eds., Elsevier, 2010, pp. 137–216.
Reichel, D., Skorupa, W., Lerch, W., and Gelpey, J.C., Temperature measurement in rapid thermal processing with focus on the application to flash lamp annealing, Crit. Rev. Solid State Mater. Sci., 2011, vol. 36, no. 2, pp. 102–128.
Magunov, A.N., Spektral’naya pirometriya (Spectral Pyrometry), Moscow: Fizmatlit, 2012.
Baller, T.S., Kools, J.C.S., and Dieleman, J., Surface temperature measurements using pyrometry during excimer laser pulsed etching of silicon in a Cl2 environment, Appl. Surf. Sci., 1990, vol. 46, pp. 292–298.
Timans, P.J., The experimental determination of the temperature dependence of the total emissivity of GaAs using a new temperature measurement technique, J. Appl. Phys., 1992, vol. 72, no. 2, pp. 660–670.
Magunov, A.N., Zakharov, A.O., and Lapshinov, B.A., Measurements of nonstationary temperatures by the spectral pyrometry method, Instrum. Exp. Tech., 2012, vol. 55, no. 1, pp. 134–139.
Pyl’nev, M.A. and Magunov, A.N., Infrared spectral pyrometry in the region of temperatures 300–1000 K, in Materialy IX Mezhdunarodnoi nauchno-tekhnicheskoi konferentsii “Fundamental’nye problemy elektronnogo priborostroeniya” (INTERMATIC-2012) (Proc. IX Int. Sci. and Tech. Conf. Fundamental Problems of Radioengineering and Device Construction) (Moscow, 2012), Moscow: MIREA-IRE RAN, 2012, vol. 1, pp. 60–63.
Timans, P.J., Emissivity of silicon at elevated temperatures, J. Appl. Phys., 1993, vol. 74, no. 10, pp. 6353–6364.
Ravindra, N.M., Sopori, B., Gokce, O.H., et al., Emissivity measurements and modeling of silicon-related materials: an overview, Int. J. Thermophys., 2001, vol. 22, no. 5, pp. 1593–1611.
Gavrilenko, V.I., Grekhov, A.M., Korbutyak, D.V., and Litovchenko, V.G., Opticheskie svoistva poluprovodnikov. Spravochnik (Handbook: Optical Properties of Semiconductors), Kiev: Naukova dumka, 1987.
Takasuka, E., Tokizaki, E., Terashima, K., and Kimura, S., Direct measurement of spectral emissivity of liquid Si in the range of visible light, Appl. Phys. Lett., 1995, vol. 67, no. 2, pp. 152–154.
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Original Russian Text © A.N. Magunov, A.O. Zakharov, B.A. Lapshinov, 2014, published in Mikroelektronika, 2014, Vol. 43, No. 3, pp. 200–206.
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Magunov, A.N., Zakharov, A.O. & Lapshinov, B.A. Measuring temperature of silicon monocrystals using spectral pyrometry. Russ Microelectron 43, 201–206 (2014). https://doi.org/10.1134/S1063739714010077
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DOI: https://doi.org/10.1134/S1063739714010077