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Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sintering

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Abstract

The dependence of the thermoelectric properties of the nanostructured bulk (Bi,Sb)2Te3 material on the composition and the spark plasma-sintering (SPS) temperature T SPS has been studied. It has been revealed that the Bi0.4Sb1.6Te3 solid solution sintered at a temperature of 450–500°C has a thermoelectric figure of merit ZT = 1.25–1.28. The dependence of thermoelectric properties on the sintering temperature T SPS above 400°C is correlated to the transformation of the fine structure of the material due to the rearrangement of point vacancy-donor defects in the process of repeated recrystallization. It has been established that point structural defects make a considerable contribution to the formation of the thermoelectric properties of nanostructured material.

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Authors and Affiliations

  1. OAO Giredmet, Bol’shoi Tolmachevskii per. 5/1, Moscow, 119017, Russia

    I. A. Drabkin, V. V. Karataev, V. B. Osvenskii, Yu. N. Parkhomenko, A. I. Sorokin & L. P. Bulat

  2. Technological Institute of Superhard and Novel Carbon Materials, ul. Tsentral’naya 7a, Troitsk, Moscow oblast, 142190, Russia

    G. I. Pivovarov

  3. Moscow Institute of Steel and Alloys, National University of Science and Technology, Leninskii pr. 4, Moscow, 119991, Russia

    V. T. Bublik & N. Yu. Tabachkova

Authors
  1. I. A. Drabkin
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  2. V. V. Karataev
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  3. V. B. Osvenskii
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  4. Yu. N. Parkhomenko
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  5. A. I. Sorokin
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  6. L. P. Bulat
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  7. G. I. Pivovarov
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  8. V. T. Bublik
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  9. N. Yu. Tabachkova
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Additional information

Original Russian Text © I.A. Drabkin, V.V. Karataev, V.B. Osvenskii, Yu.N. Parkhomenko, A.I. Sorokin, L.P. Bulat, G.I. Pivovarov, V.T. Bublik, N.Yu. Tabachkova, 2012, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki, 2012, No. 3, pp. 18–21.

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Drabkin, I.A., Karataev, V.V., Osvenskii, V.B. et al. Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sintering. Russ Microelectron 42, 448–452 (2013). https://doi.org/10.1134/S1063739713080052

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  • DOI: https://doi.org/10.1134/S1063739713080052

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