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Nonempirical simulation of chemical deposition of silicon nitride films in CVD reactors

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Abstract

This work is devoted to the atomistic simulation of chemical vapor deposition (CVD) of thin silicon nitride films from the mixture of dichlorosilane (DCS) and ammonia in CVD reactors. The earlier developed chemical mechanism is substantially extended by including the reactions of catalytic decomposition of DCS, and a self-consistent atomistic model of a CVD process is developed. An extended chemical mechanism is constructed and analyzed that allows one to adequately describe kinetic processes in a gas phase within the ranges of temperature, pressure, and the DCS: NH3 ratio of original reactants, that are characteristic of silicon nitride deposition. An effective kinetic model is developed that involves the calculation of the rate constants and the concentrations of the gas mixture components. A thermodynamic analysis of the surface coverage by various chemisorbed groups is carried out, and equilibrium surface concentrations are obtained for the main chemisorbed groups. Practically significant conclusions are made about the character of the deposition process and, in particular, about the role of the extended chemical mechanism.

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Authors and Affiliations

  1. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 34, Moscow, 117258, Russia

    T. M. Makhviladze, A. Kh. Minushev & M. E. Sarychev

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  1. T. M. Makhviladze
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  2. A. Kh. Minushev
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  3. M. E. Sarychev
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Correspondence to A. Kh. Minushev.

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Original Russian Text © T.M. Makhviladze, A.Kh. Minushev, M.E. Sarychev, 2012, published in Mikroelektronika, 2012, Vol. 41, No. 3, pp. 215–224.

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Makhviladze, T.M., Minushev, A.K. & Sarychev, M.E. Nonempirical simulation of chemical deposition of silicon nitride films in CVD reactors. Russ Microelectron 41, 196–205 (2012). https://doi.org/10.1134/S1063739712030055

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  • DOI: https://doi.org/10.1134/S1063739712030055

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