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Optical monitoring of substrate temperature and etching speed of multilayered structures during plasmochemical etching

  • Microelectronic Processes and Materials
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Abstract

Using weakly coherent tandem interferometry, the possibility of simultaneous temperature and film thickness measurements in plasmochemical etching processes of silicon on insulator structure is demonstrated. It is shown that changes of the structure’s total optical thickness related to temperature variation can be separated from a change of the physical film thickness. For that purpose we have to take in account changes of zeros interference peak amplitude caused by changes of the interferentional conditions inside the film when its thickness is changing. Temperature measurement precision is ±1°C. Thickness measurement precision is ±10 nm. The results of process monitoring closely correlate with the results of a stair’s profile obtained with a profilometer.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences GSP-105, Nizhny Novgorod, 603950, Russia

    P. V. Volkov, A. V. Goryunov, A. U. Lukyanov, D. A. Pryakhin, A. D. Tertyshnik & V. I. Shashkin

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  1. P. V. Volkov
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  2. A. V. Goryunov
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  3. A. U. Lukyanov
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  4. D. A. Pryakhin
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  5. A. D. Tertyshnik
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  6. V. I. Shashkin
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Correspondence to P. V. Volkov.

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Original Russian Text © P.V. Volkov, A.V. Goryunov, A.U. Lukyanov, D.A. Pryakhin, A.D. Tertyshnik, V.I. Shashkin, 2011, published in Mikroelektronika, 2011, Vol. 40, No. 5, pp. 331–338

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Volkov, P.V., Goryunov, A.V., Lukyanov, A.U. et al. Optical monitoring of substrate temperature and etching speed of multilayered structures during plasmochemical etching. Russ Microelectron 40, 309–315 (2011). https://doi.org/10.1134/S1063739711050106

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  • DOI: https://doi.org/10.1134/S1063739711050106

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