Abstract
Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a charge-balance equation describing carrier transitions in a multi-level system. Its numerical analysis is performed to ascertain the relationship to be satisfied by dopant concentrations.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Makram-Ebeid, S. and Ninondo, P., The Roles of the Surface and Bulk of the Semi-insulating Substrate in Low-Frequency Anomalies of GaAs Integrated Circuits, IEEE Trans. Electron Devices, 1985, vol. 32, no. 3, pp. 632–642.
Gergel’, V.A., Il’ichev, E.A., Luk’yanchenko, A.I., Poltoratskii, E.A., et al., Backgating in Gallium Arsenide Field-Effect Transistors, Fiz. Tekh. Poluprovodn. (St. Petersburg), 1992, vol. 26,issue 5, pp. 794–800.
Bespalov, V.A., Vorontsov, A.V., Gorbatsevich, A.A., Egorkin, V.I., et al., Electrophysical Properties of GaAs Layers and the Characteristics of Fast Particle GaAs Detectors, Zh. Tekh. Fiz., 2004, vol. 74,issue 3, pp. 28–73 [Tech. Phys. (Engl. Transl.), vol. 49, no. 3, pp. 310–317].
Aizenshtat, G.I., Bimatov, M., Vorob’ev, A.P., and Tolbanov, O.P., Charge Collection in Position-Sensitive X-ray Detectors Based on Chromium-Compensated Semi-insulating GaAs, in Vos’maya Rossiiskaya konferentsiya “Arsenid galliya i poluprovodnikovye soedineniya gruppy III–V, GaAs-2002 (Eighth Natl. Conf. on Gallium Arsenide and III–V Compound Semiconductors, GaAs-2002, Abstracts of Papers), pp. 269–272.
Mil’vidskii, M.G., Strukturnye defekty v monokristallakh poluprovodnikov (Structural Defects in Semiconductor Single Crystals), Moscow: Metallurgiya, 1984.
Il’ichev, E.A., Poltoratskii, E.A., Rychkov, G.S., and Khainovskii, V.I., Extension of High-Temperature Operation Limit of Gallium Arsenide Integrated Circuits, Mikroelektronika, 1996, vol. 25, no. 5, pp. 363–369 [Russ. Microelectron. (Engl. Transl.), vol. 25, no. 5, pp. 321–326].
Il’ichev, E.A., Nondestructive Method for the Characterization of Deep Levels in Semi-insulating Materials, Zh. Tekh. Fiz., 1998, vol. 68, no. 5, pp. 141–143.
Il’ichev, E.A., Krasnov, V.F., Musher, S.L., Poltoratskii, E.A., Prots’, V.I., Rubenchik, L.M., Struts, S.G., and Stupak, M.F., Elektron. Prom-st., 1990, no. 10, pp. 46–49.
Gorelenok, A.T., Andrievskii, V.F., Kamanin, A.V., Kokhonovskii, S.I., Mezdrogina, M.M., Shmidtd, N.M., and Vasil’ev, V.I., Peculiarities of Defect and Impurity Behaviour in Gallium Arsenide during Surface Gettering, Phys. Condens. Matter, 2002, vol. 14, 13 105.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Katsoev, L.V. Katsoev, E.A. Il’ichev, 2008, published in Mikroelektronika, 2007, Vol. 37, No. 5, pp. 337–343.
Rights and permissions
About this article
Cite this article
Katsoev, V.V., Katsoev, L.V. & Il’ichev, E.A. Role of deep-level centers in compensated semi-insulating GaAs. Russ Microelectron 37, 296–301 (2008). https://doi.org/10.1134/S1063739708050028
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739708050028