Abstract
Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a charge-balance equation describing carrier transitions in a multi-level system. Its numerical analysis is performed to ascertain the relationship to be satisfied by dopant concentrations.
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Original Russian Text © V.V. Katsoev, L.V. Katsoev, E.A. Il’ichev, 2008, published in Mikroelektronika, 2007, Vol. 37, No. 5, pp. 337–343.
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Katsoev, V.V., Katsoev, L.V. & Il’ichev, E.A. Role of deep-level centers in compensated semi-insulating GaAs. Russ Microelectron 37, 296–301 (2008). https://doi.org/10.1134/S1063739708050028
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DOI: https://doi.org/10.1134/S1063739708050028