Abstract
Microwave contactless measurement of photoconductivity is shown to be possible for SOS structures. Such measurements are carried out on commercial structures 100 mm in diameter with an n-Si film (σ = 4.5 Ω cm) of thickness 0.6 μm. The sheet resistance R S is found to be large and to vary considerably from specimen to specimen as a result of deep depletion of the silicon near its surface. The specimens also display variation in the shape and height of transient photoconductivity response. This is found to decay at a lower rate that is not related to the minority-carrier lifetime; the mechanism of the decay is believed to involve some unidentified processes that govern the variation of charge at the silicon surface and the silicon-sapphire interface. Applying an electric field along the normal to the silicon-sapphire interface is found to produce characteristic changes in photoconductivity depending on polarity. It is concluded that the results obtained open up possibilities for employing microwave measurement of photoconductivity in the quality testing of SOS ICs under production conditions.
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Original Russian Text © P.A. Borodovskii, A.F. Buldygin, N.I. Peturov, S.N. Rechkunov, V.A. Samoilov, 2008, published in Mikroelektronika, 2008, Vol. 37, No. 2, pp. 101–110.
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Borodovskii, P.A., Buldygin, A.F., Peturov, N.I. et al. Microwave method for SOS quality testing. Russ Microelectron 37, 89–97 (2008). https://doi.org/10.1134/S1063739708020029
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DOI: https://doi.org/10.1134/S1063739708020029