Abstract
The penetration of hypersonic waves generated in native silicon oxide under the action of an alternating electric field in the case of the illumination or ion irradiation of silicon is simulated by molecular dynamics. It is found that compression leads to an increase in the velocity of the hypersonic wave and that the attenuation of the wave in the compression region of the edge dislocation is slower than in unstrained silicon. These results are consistent with previous analytical estimates made for explanation of the long-range effect.
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References
G. V. Uspenskaya, N. N. Abramova, D. I. Tetel’baum, et al., Physical Foundations of Ion Beam Doping (Gor’kii State Univ., Gor’kii, 1971), Vol. 1, p. 96 [in Russian].
D. I. Tetelbaum, E. V. Kuril’chik, Yu. A. Mendeleva, et al., Bull. Russ. Acad. Sci.: Phys. 72 (9), 1303 (2008).
D. I. Tetelbaum, E. V. Kuril’chik, and Yu. A. Mendeleva, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 3 (2), 249 (2009).
D. I. Tetelbaum, E. V. Kuril’chik, Yu. A. Mendeleva, et al., J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 7 (4), 631 (2013).
V. L. Levshunova, G. P. Pokhil, and D. I. Tetelbaum, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 5 (2), 276 (2011).
V. L. Levshunova, G. P. Pokhil, and D. I. Tetelbaum, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 6 (2), 262 (2012).
V. L. Levshunova, G. P. Pokhil, and D. I. Tetelbaum, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 7 (2), 351 (2013).
M. Niwano, J. Kageyama, K. Kurita, et al., J. App. Phys. 76, 2157 (1994).
R. Sugino, Y. Nara, H. Horie, et al., J. App. Phys. 76, 5498 (1994).
J. H. Mazur, R. Gronsky, and J. Washburn, in Proc. 3rd Oxford Conference on Microscopy of Semiconducting Materials (Institute of Physics, Oxford, 1983), p. 77.
O. L. Krivanek and J. H. Mazur, Appl. Phys. Lett. 37, 392 (1980).
S. T. Pantelides and M. Long, in The Physics of SiO2 and its Interfaces, Ed. by S. T. Pantelides (Pergamon, New York, 1978), p. 339.
A. Tandia, Microelectron. Eng. 33, 423 (1997).
W. A. Dollase, Acta Crystallogr. 23, 617 (1967).
A. Pasquarello, M. S. Hybertsen, and R. Car, Phys. Rev. Lett. 74, 1024 (1995).
M. P. Shaskol’skaya, Crystallography (Vysshaya Shkola, Moscow, 1976) [in Russian].
S. Plimpton, J. Comput. Phys. 117, 1 (1995).
V. Sadovnichy, A. Tikhonravov, Vl. Voevodin, et al., Contemporary High Performance Computing: From Petascale toward Exascale (CRC Press, Boca Raton, FL, 2013), p. 283.
J. Tersoff, Phys. Rev. B 39, 5566 (1989).
J. Tersoff, Phys. Rev. B 41, 3248 (1990).
S. Munetoh, T. Motooka, K. Moriguchi, et al., Comput. Mater. Sci. 39, 334 (2007).
A. K. Rappe and W. A. Goddard, J. Phys. Chem. 95, 3358 (1991).
H. J. C. Berendsen, J. P. M. Postma, W. F. van Gunsteren, et al., J. Chem. Phys. 81, 3684 (1984).
S. Nose, J. Chem. Phys. 81, 511 (1984).
L. C. Feldman and J. W. Mayer, Fundamentals of Surface and Thin Film Analysis (North Holland, Elsevier Science, Amsterdam, 1986).
J. P. Hirth and I. Lotte, Theory of Dislocations (McGraw-Hill, New York, 1968).
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Original Russian Text © A.V. Stepanov, D.I. Tetelbaum, 2017, published in Poverkhnost’, 2017, No. 7, pp. 82–88.
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Stepanov, A.V., Tetelbaum, D.I. Molecular dynamics simulation of the penetration of silicon by hypersonic waves generated in native silicon oxide under irradiation. J. Surf. Investig. 11, 756–761 (2017). https://doi.org/10.1134/S1027451017040127
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DOI: https://doi.org/10.1134/S1027451017040127