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Temperature Dependence of Carrier Generation at the Silicon–Lead-Borosilicate-Glass Interface

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Abstract

The carrier generation at the silicon–lead-borosilicate-glass interface is studied by the method of pulsed MIS capacitor. It is shown that the temperature dependence of the surface generation velocity is governed by the tunnel and tunnel-activated charge-state alteration of glass traps located near the interface.

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Authors and Affiliations

  1. Uzbek State University, Tashkent, Uzbekistan

    S. I. Vlasov, P. B. Parchinskii & L. G. Ligai

Authors
  1. S. I. Vlasov
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  2. P. B. Parchinskii
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  3. L. G. Ligai
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Vlasov, S.I., Parchinskii, P.B. & Ligai, L.G. Temperature Dependence of Carrier Generation at the Silicon–Lead-Borosilicate-Glass Interface. Russian Microelectronics 32, 95–96 (2003). https://doi.org/10.1023/A:1022652002047

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