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Radiation effects on memristor-based non-volatile SRAM cells

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Abstract

Memristors are a promising candidate for non-volatile memory elements. In this paper, we performed a radiation study on different memristor-based topological Non-Volatile Static Random Access Memory (NVSRAM). A Voltage ThrEshold Adaptive Memristor (VTEAM) model is considered for simulation analysis related to this work. In this paper, four different topologies, namely 3-Transistor 2-Memristor (3T2M) SRAM cell, 2-Transmission Gate 1-Memristor (2TG1M) SRAM cell, 1-Transistor 1-Memristor (1T1M) SRAM cell, and 4-Transistor 2-Memristor (4T2M) SRAM cell are investigated. A double-exponential current pulse is induced during a read operation and perturbation is observed due to irradiation. The memory cell retains its original state after radiation dose is removed. 4T2M SRAM topology is more reliable because its highest threshold current value is \(100\,{\upmu }\hbox {A}\), whereas 1T1M SRAM topology is less reliable with the lowest threshold current value of 5 nA.

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References

  1. Meena, Jagan Singh, et al.: Overview of Emerging Non-Volatile Memory Technologies. Nanoscale research letters (2014). https://doi.org/10.1186/1556-276X-9-526

    Google Scholar 

  2. Lu, Wei: Resistive Random Access Memory (RRAM): Materials and Devices. IEEE Workshop on Microelectronics & Electron Devices (WMED) (2013). https://doi.org/10.1109/WMED.2013.6544498

  3. lelmini, Daniele: “Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling”, Semiconductor Science & Technology, 31(6). https://doi.org/10.1088/0268-1242/31/6/063002

  4. Radwan, A.G., Fouda, M.E.: On the Mathematical Modeling of Memristor, Memcapacitor, and Meminductor, Studies in Systems, Decision, and Control. Springer International Publishing Switzerland (2015). https://doi.org/10.1007/978-3-319-17491-4_2

  5. Mazumdar, Pinaki, et al.: “Memristor: Devices, Models, and Applications,” Proceedings of IEEE, 100(6), (June 2012). https://doi.org/10.1109/JPROC.2012.2190812

  6. Kvatinsky, Shahar, Talisveyberg, Keren, Filter, Dimitri: “Models of Memristor for Spice Simulations,” IEEE 27th Convention of Electrical and Electronics Engineers, (2012), Israel

  7. Ibrayev, Timur, et al.: On Design of Memristive Amplifier Circuits. Circuits and Systems 5, 265–273 (2014)

    Article  Google Scholar 

  8. Bahgat, A.T., Salama, K.N.: “Memristor- based Monostable Oscillator,” Arxiv (July 2012)

  9. Mosad, A.G., et al.: “Improved memristor-based Relaxation Oscillator,” Microelectronics Journal. https://doi.org/10.1016/j.mejo.2013.04.005

  10. Abuelma’atti, Muhammad Taher, Zainualbideen, : A Memristor-based Wien bridge Sinusoidal/ Chaotic Oscillator. International Journal of Electrical Engineering Education 53(3), 280–288 (2016). https://doi.org/10.1177/0020720915622471

    Article  Google Scholar 

  11. Vishnu, S., Saji, Sincy Ann, Rohit, R., Ramakrishnan, V. N.: “Application of Memristor in Active Filters,” \(3^{rd}\) International Conference on Devices, Circuits and Systems (ICDCS-2016)

  12. Amdapurkar, Apoorva, et al.: “Design and Development of Memristor-based Combinational Circuits,” International Journal on Recent and Innovation Trends in Computing and Communication, 4(3), (March 2016)

  13. Priyanka, M. Micheal, Ravi, T.: “An Efficient Prompt Multiplexers using Memristors,” IEEE-WiSPNET 2016 Conference

  14. Chakraborty, Anindita, et al.: “Design of Memristor-based Up-Down Counter using Material Implication Logic,” International Conference on Advances in Computing, Communication, and Informatics, 2016, Jaipur, India

  15. Vujisic, Milos, et al.: “Simulated Effects on Proton and Ion Beam Irradiation on Titanium Dioxide Memristors,” IEEE Transactions on Nuclear Sciences, 57(4), (August 2010)

  16. Marjanovic, Nada S., et al.: “Simulated Exposure of Titanium Dioxide Memristor to Ion Beams,” Nuclear Technology and Radiation Protection, 25(2), (2010)

  17. Lazarevic, Djordje R., et al.: “Radiation Hardness of Indium Oxide Films in the Cooper-Pair Insulator State,” Nuclear Technology and Radiation Protection, 27(1), (2012)

  18. Sarwar, Syed Shakib, et al.: “Memristor-based non-volatile random access memory: Hybrid architecture for low power compact memory design,” IEEE Access (2013). https://doi.org/10.1109/ACCESS.2013.2259891

  19. Ho, Patrick W. C., et al.: “1-bit Non-volatile memory cell using memristor and transmission gates”, \(2^{nd}\) International Conference on Electronic Design (ICED), (2014)

  20. Yong – Xiao, Li, Jin-Fu: “Fault Modeling and Testing of 1T1R memristor memories,” IEEE \(33^{rd}\) VLSI Test Symposium (VTS) (2015)

  21. Saminathan, Veerappan, Paramasivam, Kuppuswamy: “Design and Analysis of Low Power Hybrid Memristor-CMOS based Distinct Binary Logic Nonvolatile SRAM Cell,” Circuits and Systems, (2016). https://doi.org/10.4236/cs.2016.73012

  22. Wang, Fan, Agarwal, Vishwani D.: “Single Event Upset: An Embedded Tutorial,” \(21^{st}\) VLSI Design Conference. https://doi.org/10.1109/VLSI.2008.28

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  1. Department of Micro and Nanoelectronics, School of Electronics Engineering, VIT University, Vellore, Tamil Nadu, India

    H. M. Vijay & V. N. Ramakrishnan

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  1. H. M. Vijay
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  2. V. N. Ramakrishnan
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Correspondence to H. M. Vijay.

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Vijay, H.M., Ramakrishnan, V.N. Radiation effects on memristor-based non-volatile SRAM cells. J Comput Electron 17, 279–287 (2018). https://doi.org/10.1007/s10825-017-1080-x

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  • DOI: https://doi.org/10.1007/s10825-017-1080-x

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