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A novel approach of high-performance grinding using developed diamond wheels

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Abstract

A novel approach of high-performance grinding is proposed using developed diamond wheels, to obtain minimally damaged surface layer in silicon wafers. For this reason, resin bond diamond wheels are specifically developed with lanthanum oxide (La2O3), magnesium oxide (MgO), and ceria (CeO2) as additives, respectively. The wheels contain grains with a mesh number of 20,000 and a volume fraction of diamond grains of 37.5%. The diamond wheel with ceria additives demonstrates the best grinding performance in terms of surface integrity and roughness. It allows to generate an amorphous surface layer of 43 nm in thickness, without grinding damage beneath in a silicon wafer. This is different from previous reports, in which an amorphous layer is at the top, followed by a damaged crystalline layer underneath induced by a diamond wheel. Below the amorphous layer is the pristine crystalline lattice, which is confirmed using the high-resolution transmission electron microscopy (HRTEM). The ceria wheel results in a surface roughness R a of 0.88 nm and a peak-to-valley (PV) value of 8.3 nm over an area of 70 × 50 μm2 on a Si wafer at a feed rate of 15 μm/min.

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Authors and Affiliations

  1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, China

    Zhenyu Zhang, Siling Huang, Shaochen Wang, Bo Wang, Qian Bai, Bi Zhang, Renke Kang & Dongming Guo

  2. Changzhou Institute of Dalian University of Technology, Changzhou, 213164, China

    Zhenyu Zhang

  3. Department of Mechanical Engineering, University of Connecticut, Storrs, CT, 06269, USA

    Bi Zhang

Authors
  1. Zhenyu Zhang
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  2. Siling Huang
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  3. Shaochen Wang
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  4. Bo Wang
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  5. Qian Bai
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  6. Bi Zhang
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  7. Renke Kang
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  8. Dongming Guo
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Correspondence to Zhenyu Zhang.

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Zhang, Z., Huang, S., Wang, S. et al. A novel approach of high-performance grinding using developed diamond wheels. Int J Adv Manuf Technol 91, 3315–3326 (2017). https://doi.org/10.1007/s00170-017-0037-3

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  • DOI: https://doi.org/10.1007/s00170-017-0037-3

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