Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond

K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada

Phys. Rev. B 81, 045303 – Published 8 January 2010

Abstract

Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.

Received 21 May 2009

DOI:https://doi.org/10.1103/PhysRevB.81.045303

Authors & Affiliations

K. Tsugawa^1,2,*, H. Noda¹, K. Hirose³, and H. Kawarada¹

¹School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
²Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
³Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan

^*k.tsugawa@aist.go.jp

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Vol. 81, Iss. 4 — 15 January 2010

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