Abstract
This work demonstrates the in situ growth of carbon nanowalls (CNWs) on diamond semiconductors by microwave plasma-assisted chemical vapor deposition. The resulting CNW/diamond junctions behave as photomemristors having both photocontrollable multiple resistance states and nonvolatile memory functions. The resistance state (high or low resistance) can be selected by irradiation with blue or violet light in conjunction with the application of a bias voltage, giving a large resistance switching ratio of ∼106. The photoinduced resistance switching behaviors are rarely observed and has only been observed in a few materials and/or heterostructures. These junctions also exhibit a photoresponsivity of ∼12 A/W, which is much larger than that obtained from photodiodes composed of other materials. These results suggest that CNW/diamond (i.e., carbon sp2/sp3) junctions could have applications in novel photocontrollable devices, which have photosensing, memory, and switching functions.
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M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, and T. Makimoto: Diamond-based RF power transistors: Fundamentals and applications. Diamond Relat. Mater. 16, 1010 (2007).
H. Kawarada, H. Tsuboi, T. Naruo, T. Yamada, T. Xu, A. Daicho, T. Saito, and A. Hiraiwa: C—H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation. Appl. Phys. Lett. 105, 013510 (2014).
A.K. Geim and K.S. Novoselov: The rise of graphene. Nat. Mater. 6, 183 (2007).
S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, D.C. Elias, J.A. Jaszczak, and A.K. Geim: Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100, 016602 (2008).
J. Yu, G. Liu, A.V. Sumant, V. Goyal, and A.A. Baladin: Graphene-on-diamond devices with increased current-carrying capacity: Carbon sp2-on-sp3 technology. Nano Lett. 12, 1603 (2012).
S. Konabe, N.T. Cuong, M. Otani, and S. Okada: High-efficiency photoelectric conversion in graphene—diamond hybrid structures: Model and first-principles calculations. Appl. Phys. Express 6, 045104 (2013).
T. Shiga, S. Konabe, J. Shiomi, T. Yamamoto, S. Maruyama, and S. Okada: Graphene—diamond hybrid structure as spin-polarized conducting wire with thermally efficient heat sinks. Appl. Phys. Lett. 100, 233101 (2012).
Y. Ma, Y. Dai, M. Guo, and B. Huang: Graphene—diamond interface: Gap opening and electronic spin injection. Phys. Rev. B 85, 235448 (2012).
Y. Wang, M. Jaiswal, M. Lin, S. Saha, B. Ozyilmaz, and K.P. Loh: Electronic properties of nanodiamond decorated graphene. ACS Nano 6, 1018 (2012).
K. Ueda, S. Aichi, and H. Asano: Photo-controllable memristive behavior of graphene/diamond heterojunctions. Appl. Phys. Lett. 108, 222102 (2016).
Y. Tzeng, W.L. Chen, C. Wu, J-Y. Lo, and C-Y. Li: The synthesis of graphene nanowalls on a diamond film on a silicon substrate by direct-current plasma chemical vapor deposition. Carbon 53, 120 (2013).
K. Davami, M. Shaygan, N. Kheirabi, J. Zhao, D.A. Kovalenko, M.H. Rummeli, J. Opitz, G. Cuniberti, J-S. Lee, and M. Meyyappan: Synthesis and characterization of carbon nanowalls on different substrates by radio frequency plasma enhanced chemical vapor deposition. Carbon 72, 372 (2014).
M. Hiramatsu, K. Shiji, H. Amano, and M. Hori: Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma enhanced chemical vapor deposition assisted by hydrogen radical injection. Appl. Phys. Lett. 84, 4708 (2004).
H. Ago, Y. Ogawa, M. Tsuji, S. Mizuno, and H. Hibino: Catalytic growth of graphene: Toward large-area single-crystalline graphene. J. Phys. Chem. Lett. 3, 2228 (2012).
S. Kondo, S. Kawai, W. Takeuchi, K. Yamakawa, S. Den, H. Kano, M. Hiramatsu, and M. Hori: Initial growth process of carbon nanowalls synthesized by radical injection plasma enhanced chemical vapor deposition. J. Appl. Phys. 106, 094302 (2009).
K. Kobashi, K. Nishimura, Y. Kawate, and T. Horiuchi: Synthesis of diamonds by use of microwave plasma chemical-vapor deposition: Morphology and growth of diamond films. Phys. Rev. B 38, 4067 (1988).
R.J. Nemanich, J.T. Glass, G. Lucovsky, and R.E. Shroder: Raman scattering characterization of carbon bonding in diamond and diamondlike thin films. J. Vac. Sci. Technol., A 6, 1783 (1988).
A.N. Kolmogorov and V.H. Crespi: Registry-dependent interlayer potential for graphitic systems. Phys. Rev. B 71, 235415 (2005).
T.H. Borst and O. Weiss: Electrical characterization of homoepitaxial diamond films doped with B, P, Li, and Na during crystal growth. Diamond Relat. Mater. 7, 948 (1995).
C-C. Chen, M. Aykol, C-C. Chang, A.F.J. Levi, and S.G. Cronin: Graphene—silicon Schottky diodes. Nano Lett. 11, 1863 (2011).
L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti: Metal—semiconductor—metal near-infrared light detector based on epitaxial Ge/Si. Appl. Phys. Lett. 72, 3175 (1998).
L. Zeng, M. Wang, H. Hu, B. Nie, Y. Yu, C. Wu, L. Wang, J. Hu, C. Xie, F. Liang, and L. Luo: Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector. ACS Appl. Mater. Interfaces 5, 9362 (2013).
Y.V. Pershin and M.D. Ventra: Memory effects in complex materials and nanoscale systems. Adv. Phys. 60, 145 (2011).
T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura: Hysteretic current—voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3. Appl. Phys. Lett. 86, 012107 (2005).
W. Wang, G.N. Panin, X. Fu, L. Zhang, P. IIanchezhiyan, V.O. Pelenovich, D. Fu, and T.W. Kang: MoS2 memristor with photoresistive switching. Sci. Rep. 6, 31224 (2016).
P. Maier, F. Hartmann, M.R.S. Dias, M. Emmerling, C. Schneider, L.K. Castelano, M. Kamp, G.E. Marques, V. Lopez-Richard, L. Worschech, and S. Hofling: Light sensitive memristor with bi-directional and wavelength-dependent conductance control. Appl. Phys. Lett. 109, 023501 (2016).
S. Porro, E. Accornero, C.F. Pirri, and C. Ricciardi: Memristive devices based on graphene oxide. Carbon 85, 383 (2015).
T.J. Raeber, Z.C. Zhao, B.J. Mordoch, D.R. McKenzie, D.G. McCulloch, and J.G. Partridge: Resistive switching and transport characteristics of an all-carbon memristor. Carbon. 136, 280 (2018).
Y. Chen, K. Chang, T. Chang, H. Chen, T. Young, T. Tsai, R. Zhang, T. Chu, J. Ciou, J. Lou, K. Chen, J. Chen, J. Zheng, and S.M. Sze: Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor. IEEE Electron Device Lett. 35, 1016 (2014).
K. Ueda, K. Kawamoto, T. Soumiya, and H. Asano: High-temperature characteristics of Ag and Ni/diamond Schottky diodes. Diamond Relat. Mater. 38, 41 (2013).
Acknowledgments
This work was supported in part by a JSPS KAKENHI (number 16H04348) and by research grants from the Toyoaki Foundation, Tatematsu Foundation, Murata Science Foundation, and the Research Foundation for Opto-Science and Technology.
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Ueda, K., Itou, H. & Asano, H. Photomemristors using carbon nanowall/diamond heterojunctions. Journal of Materials Research 34, 626–633 (2019). https://doi.org/10.1557/jmr.2018.498
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DOI: https://doi.org/10.1557/jmr.2018.498