Nonvolatile multilevel switching in artificial synaptic transistors based on epitaxial LiCoO2 thin films

Heshan Yu, Megan E. Holtz, Yunhui Gong, Justin Pearson, Yaoyu Ren, Andrew A. Herzing, Xiaohang Zhang, and Ichiro Takeuchi
Phys. Rev. Materials 5, 115401 – Published 10 November 2021

Abstract

In this study, we fabricate high-quality epitaxial Li1xCoO2 (LCO) thin films on SrTiO3 substrates with different orientations and systematically investigate the change in the crystal orientation of thin-film grains by tuning the oxygen deposition pressure. Further tensile strain study reveals the depth dependence in these epitaxial LCO thin films. Further, synaptic transistors are fabricated based on these high-quality epitaxial LCO films, and long-duration nonvolatile potentiation and depression states are established. By reducing the thickness of the LCO channel, the signal-to-noise ratio of the nonvolatile switching is substantially improved. Changes in the potentiation and depression states are found to significantly depend on the lattice orientation of the LCO channel, suggesting that an anisotropic Li-ion diffusion rate in highly crystallized LCO films plays an important role in the device performance.

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  • Received 9 April 2021
  • Accepted 26 October 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.5.115401

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Heshan Yu1, Megan E. Holtz2, Yunhui Gong1, Justin Pearson1, Yaoyu Ren1, Andrew A. Herzing2, Xiaohang Zhang1, and Ichiro Takeuchi1,3,*

  • 1Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
  • 2Material Measurement Laboratory,National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
  • 3Maryland Quantum Materials Center, University of Maryland, College Park, Maryland 20742, USA

  • *takeuchi@umd.edu

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Issue

Vol. 5, Iss. 11 — November 2021

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