PETE : Purdue Emerging Technology Evaluator

Estimate circuit level performance and power of novel devices

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Archive Version 1
Published on 14 Jan 2008, unpublished on 13 Feb 2008 All versions

doi:10.4231/D35D8ND7G cite this

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Abstract

Using PETE one can evaluate any MOSFET like devices or any New Devices in terms of performance on Benchmark circuits. The input to the tool can be in terms of typical MOSFET parameters or in terms of I-V and C-V tables. The Benchmark circuits include minimum sized inverter, nand chain, norchain, 8-bit Full Adder, Ring Oscillator and Cascaded inverters driving a big load capacitance. Further, one can perform DC simulations on inverters and obtain voltage transfer characteristics (VTCs) and noise margin/ gain from the VTC.

Credits

Thanks to the following people for their contributions to this work:



Arijit Raychowdhury and Charles Augustine ... Core engine
Yunfei Gao ... GUI development
Arijit Raychowdhury ... Theory

We would also like to acknowledge our helpful discussions with Jaydeep Kulkarni and Qikai Chen.

This work was funded by the Nanoelectronics Research Initiative (NRI) and Intel Corporation.

Sponsored by

Nanoelectronics Research Initiative and Intel Corp.

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom, Arijit Raychowdhury, Yunfei Gao, Charles Augustine (2016), "PETE : Purdue Emerging Technology Evaluator," https://nanohub.org/resources/pete. (DOI: 10.4231/D35D8ND7G).

    BibTex | EndNote

Tags

  1. benchmarking
  2. characterization
  3. circuits
  4. MOSFET
  5. nanoelectronics
  6. performance
  7. power
  8. system performance