Electric-Field Control of Exchange Bias in Multiferroic Epitaxial Heterostructures

V. Laukhin, V. Skumryev, X. Martí, D. Hrabovsky, F. Sánchez, M. V. García-Cuenca, C. Ferrater, M. Varela, U. Lüders, J. F. Bobo, and J. Fontcuberta
Phys. Rev. Lett. 97, 227201 – Published 28 November 2006

Abstract

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.

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  • Received 14 July 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.227201

©2006 American Physical Society

Authors & Affiliations

V. Laukhin1,2, V. Skumryev2,3, X. Martí1, D. Hrabovsky1, F. Sánchez1, M. V. García-Cuenca4, C. Ferrater4, M. Varela4, U. Lüders5, J. F. Bobo5, and J. Fontcuberta1

  • 1Institut de Ciència de Materials de Barcelona-CSIC, Campus UAB, Bellaterra 08193, Spain
  • 2Institut Català de Recerca i Estudis Avançats (ICREA), Barcelona, Spain
  • 3Departament de Física, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
  • 4Departament de Física Aplicada i Òptica, Universitat de Barcelona, Diagonal 647, Barcelona 08028, Spain
  • 5LNMH ONERA-CNRS, BP 4025, 31055 Toulouse, Cedex 4, France

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Issue

Vol. 97, Iss. 22 — 1 December 2006

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