Issue 15, 2011

Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts

Abstract

Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.

Graphical abstract: Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts

Article information

Article type
Paper
Submitted
04 Jan 2011
Accepted
11 Feb 2011
First published
14 Mar 2011

Phys. Chem. Chem. Phys., 2011,13, 6931-6935

Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts

Y. J. Zeng, M. Menghini, D. Y. Li, S. S. Lin, Z. Z. Ye, J. Hadermann, T. Moorkens, J. W. Seo, J.-P. Locquet and C. Van Haesendonck, Phys. Chem. Chem. Phys., 2011, 13, 6931 DOI: 10.1039/C1CP00012H

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