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Microelectronic Engineering
Volume 83, Issues 4-9, April-September 2006, Pages 800-803
Micro- and Nano-Engineering MNE 2005
 
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doi:10.1016/j.mee.2006.01.129    How to Cite or Link Using DOI (Opens New Window)
Copyright © 2006 Elsevier B.V. All rights reserved.

Investigation of FIB assisted CoSi2 nanowire growth

L. BischoffCorresponding Author Contact Information, E-mail The Corresponding Author, B. Schmidt, Ch. Akhmadaliev and A. Mücklich

Research Centre Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 51 01 19, D-01314 Dresden, Germany

Available online 17 February 2006.

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Abstract

The ion beam synthesis process of CoSi2 by writing stoichiometric ion implantation and subsequent annealing has been studied. For this a Focused Ion Beam (FIB), equipped with a Co36Nd64 alloy liquid metal ion source, was applied. Si(1 0 0) and (1 1 1) wafers were implanted with 60 keV Co2+ ions in the dose range of 2 × 1016–2 × 1017 cm−2. The implantation parameters, like pixel dwell time, relaxation time, dose rate as well as the pixel overlapping factor were investigated. During subsequent annealing CoSi2 nanostructures with dimensions down to 10 nm have been achieved. To investigate the silicide formation more in detail the annealing process was done in situ in a transmission electron microscope (TEM) on a pre-dimpled and FIB implanted samples of a Si(1 1 1). The formation of the cobalt silicide nano-crystals was monitored by plane-view TEM imaging during a 30 min heat treatment at 600 °C in vacuum.

Keywords: Focused ion beam; Cobaltdisilicide; Ion beam synthesis; Nanowire

Article Outline

1. Introduction
2. Experimental
3. Results and discussion
3.1. Beam profile and dose calculation
3.2. Analysis of the CoSi2 nanostructures
4. Summary
Acknowledgements
References





Microelectronic Engineering
Volume 83, Issues 4-9, April-September 2006, Pages 800-803
Micro- and Nano-Engineering MNE 2005
 
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