doi:10.1016/j.cossms.2006.03.004
Copyright © 2006 Elsevier Ltd All rights reserved.
Silicon nanostructures from electroless electrochemical etching
Kurt W. Kolasinskia, 
aDepartment of Chemistry, University of Virginia, P.O. Box 400319, McCormick Road, Charlottesville, VA 22904-4319, United States
Available online 7 April 2006.
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Abstract
Recent advances in the production of Si nanostructures from electroless etching are reviewed, including stain etching, metal-assisted etching and chemical vapour etching. A brief review of the explosion in applications of porous silicon over the past 18 months is also given. The stain film that results from the etching of (poly- or single-)crystalline Si is composed of a porous network of nanocrystalline silicon. Few mechanistic studies of electroless etching have been performed, but the more extensively studied anodic etching of silicon in fluoride solutions provides many clues as to how porous films are formed. Intriguing recent results have shown that control over the properties of the film can be obtained by exercising control over the composition of the etchant.
Keywords: Stain etching; Porous silicon; Nanostructure; HF; Nanowire
Fig. 1. Cross-sectional view of the porous silicon based micro-direct ethanol fuel cell (DEFC) stack. The macroporous Si layer provides channels for contact of air and fuel with the electrodes. Reprinted with permission from S. Aravamudhan, A. R. A. Rahman, S. Bhansali, Sens. Actuators A 2005, 123–124, 497.
Elsevier
Fig. 2. Hole injection can occur via an acceptor level such as A+, that lies below the VBM but not one such as B+ that lies above it.
Fig. 3. The PL from films etched with Fe3+ (E0 = 0.47 V versus the standard calomel electrode (SCE)) peaks at 696 nm, compared to 654 nm for HNO3 (E0 = 0.66 V) and 604 nm for
.
Fig. 4. Experimental energy diagram of the interface between Si and a blank fluoride solution (- - -) at pH 2 and fluoride solution (—) in the presence of 1 mM Pt2+/Pt. Reprinted with permission from P. Gorostiza, P. Allongue, R. Diaz, J.R. Morante, F. Sanz, J. Phys. Chem. B 2003, 107, 6454.
American Chemical Society
Fig. 5. A cross-sectional electron micrograph of a por-Si film composed of vertical Si nanowires. The film was created by etching in a 4.6 mol dm−3 HF + 0.02 mol dm−3 AgNO3 solution for 60 min at 50 °C. Reprinted with permission from K. Q. Peng, Z. P. Huang, J. Zhu, Adv. Mater. 2004, 16, 73.
Wiley-VCH