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Materials Science and Engineering B
Volume 67, Issues 1-2, 8 December 1999, Pages 17-22
 
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doi:10.1016/S0921-5107(99)00204-4    How to Cite or Link Using DOI (Opens New Window)
Copyright © 1999 Elsevier Science S.A. All rights reserved.

Semiconductor alloys for monolithic integration with Si microelectronics

N. MollCorresponding Author Contact Information, E-mail The Corresponding Author, Tairan Wang, Kyeongjae Cho1 and J. D. Joannopoulos

Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

Received 6 January 1999.
Available online 2 December 1999.

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Abstract

We introduce a novel class of semiconductors which is optically active and solves the problems with lattice-constant mismatches and polarity mismatches that are normally an issue in heteroepitaxial growth of III–V alloys on silicon substrates. Using ab initio total energy calculations and quasi-particle GW calculations we examine physical properties of various configurations of these novel materials and identify a particular suitable configuration. This configuration is lattice-constant matched to Si and has a direct band gap very close to the operating wavelength of optical fibers. Therefore, this novel class could lead to monolithic integration of optical materials and Si circuits.

Author Keywords: Semiconductor alloys; Monolithic integration; Si microelectronics

Article Outline

1. Introduction
2. Novel class of semiconductors
3. Computational details
4. Results
5. Summary and conclusion
Acknowledgements
References






 
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