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Characterization Method for Integrated Magnetic Devices at Lower Frequencies (up to 110 MHz)

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Abstract

Nowadays, the characterization of planar integrated components is a challenge. The objective is to characterize these devices on a broadband frequency (from a few Hz to a few GHz). Currently, these integrated devices cannot be characterized at low frequencies (less than 1 MHz). This paper presents a new method and techniques for measuring integrated devices where their operating frequencies are up to 100 MHz. Indeed, by using an impedance-meter in the frequency band of 40 Hz to 110 MHz, integrated magnetic transformers have been characterized. In order to validate this method, a comparison made by a vector network analyzer has been made on the frequency band overlap (2 MHz to 110 MHz). This new method consists in measuring the impedance and admittance matrices of the device in order to determine the electronic properties of the component. The results obtained using two measurement instruments present a good correlation on the frequency band overlap. The measurement uncertainties are equal to 2% for the impedance-meter and 1% with the vector network analyzer. This comparison validates the good performance of the techniques and methods developed for characterizing integrated components.

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Authors and Affiliations

  1. Univ Lyon, UJM-Saint-Etienne, CNRS, LabHC UMR 5516, F-42023, Saint-Etienne, France

    D. A. Oumar, M. I. Boukhari, M. A. Taha, S. Capraro, D. Piétroy, J. P. Chatelon & J. J. Rousseau

  2. Polytechnic University of Mongo, Mongo, Chad

    D. A. Oumar

  3. National Institute of Science and Technology of Abéché, Abéché, Chad

    M. I. Boukhari & M. A. Taha

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  1. D. A. Oumar
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  2. M. I. Boukhari
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  3. M. A. Taha
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  4. S. Capraro
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  5. D. Piétroy
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  6. J. P. Chatelon
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  7. J. J. Rousseau
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Correspondence to S. Capraro.

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Responsible Editor: M. Margala

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Oumar, D.A., Boukhari, M.I., Taha, M.A. et al. Characterization Method for Integrated Magnetic Devices at Lower Frequencies (up to 110 MHz). J Electron Test 35, 245–252 (2019). https://doi.org/10.1007/s10836-019-05790-3

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  • DOI: https://doi.org/10.1007/s10836-019-05790-3

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