GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells

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Published 17 September 2013 • Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation Wei-Chih Lai et al 2013 Appl. Phys. Express 6 102101 DOI 10.7567/APEX.6.102101

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Author affiliations

1 Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan

2 Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan

Dates

  1. Received 31 July 2013
  2. Accepted 1 September 2013
  3. Published

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Abstract

We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0 nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5 nm and 30.7%, respectively).

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10.7567/APEX.6.102101