Fabrication of Silicon Pyramid-Nanocolumn Structures with Lowest Reflectance by Reactive Ion Etching Method

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Published 20 June 2013 Copyright (c) 2013 The Japan Society of Applied Physics
, , Citation DaeYoung Kong et al 2013 Jpn. J. Appl. Phys. 52 06GL06 DOI 10.7567/JJAP.52.06GL06

1347-4065/52/6S/06GL06

Abstract

We have developed nanosized structures on a silicon surface by the reactive ion etching method. The purpose of this work is to fabricate pyramid-nanocolumn structures for crystalline silicon solar cells using a reactive ion etching (RIE) system with a metal mesh and to simulate surface texturing structures using the PC1D program. The reflectance of the structures was lower than that of only-pyramid or only-nanocolumn structure arrays. We formed micropyramids by general anisotropic saw damage removal (SDR) etching using potassium hydroxide (KOH) solution, as well as nanocolumn structures by RIE with a metal mesh and SF6/O2 gas (35/30 sccm). We studied the fundamentals and morphologies of structures (micropyramids, nanocolumn structures, and pyramid-nanocolumn structures). Owing to anisotropic SDR etching in KOH solution for a single-crystalline silicon wafer, the whole wafer surface is covered with pyramid structures with a size range of 1–5 µm. After RIE texturing, nanocolumn structures with a size range of 20–50 nm were formed on the pyramid structures. Owing to binary surface texturing with pyramid and nanocolumn structures, spectra with weighted average reflectances below 3% in the wavelength range from 350 to 1100 nm were obtained under optimized condition. In particular, the average reflectance was 1.16% in the wavelength range of 400 to 1000 nm without an antireflection coating (ARC). The combination of the pyramid and nanostructures has a very low reflectance. Therefore, ARC is not required in the solar cell process in the case of using pyramid-nanocolumn structures.

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10.7567/JJAP.52.06GL06