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小尺寸应变Si金属氧化物半导体场效应晶体管栅隧穿电流预测模型

吴铁峰 张鹤鸣 王冠宇 胡辉勇

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小尺寸应变Si金属氧化物半导体场效应晶体管栅隧穿电流预测模型

吴铁峰, 张鹤鸣, 王冠宇, 胡辉勇

Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong
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  • 小尺寸金属氧化物半导体场效应晶体管(MOSFET)器件由于具有超薄的氧化层、关态栅隧穿漏电流的存在严重地影响了器件的性能,应变硅MOSFET器件也存在同样的问题.为了说明漏电流对新型应变硅器件性能的影响,文中利用积分方法从准二维表面势分析开始,提出了小尺寸应变硅MOSFET栅隧穿电流的理论预测模型,并在此基础上使用二维器件仿真软件ISE进行了仔细的比对研究,定量分析了在不同栅压、栅氧化层厚度下MOSFET器件的性能.仿真结果很好地与理论分析相符合,为超大规模集成电路的设计提供了有价值的参考.
    For scaled metal-oxide semiconductor field effect transistor (MOSFET) devices, normal operation is seriously affected by the static gate tunneling leakage current due to the ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impact of gate leakage current on performance of novel strained Si device, a theoretical gate tunneling current predicting model by integral approach following the analysis of quasi-two-dimensional surface potential is presented in this study. On the basis of theoretical model, performance of MOSFET device was quantitatively studied in detail using ISE simulator, including different gate voltages and gate oxide thickness. The experiments show that simulation results agree well with theoretical analysis, and the theory and experimental data will contribute to future VLSI circuit design.
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    Mondal I, Dutta A K 2008 IEEE Trans. Electron Dev. 55 1682

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    Lin C H, Kuo J B, Su K W, Liu S 2006 Electro. Lett. 42 182

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    Yang N, Henson W K, Wortman J 2000 IEEE Trans. Electron Dev. 47 1634

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    Joshi G, Singh D N, Thangjam S 2008 IEEE Conference Arlington Texas p37

    [6]

    Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Acta Phys. Sin. 59 579 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2010 物理学报 59 579 ]

    [7]

    Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys.Sin. 56 5036 (in Chinese)[陈卫兵、徐静平、邹 晓、李 艳萍、许胜国、胡致富 2006 物理学报56 5036] 〖8] Cao Y R, Ma X H, Hao Y, Hu S G 2010 Chin. Phys. B 19 047307

    [8]

    Padhi R, Kothari M 2009 Int. J. Innova. Comp., Inf. Cont. 5 399

    [9]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]

    [10]

    Pavel A A, Sharma A, Islam N 2008 IEEE Electron Dev. Lett. 29 1370

    [11]

    O’Neil A G, Antoniadis D A 1996 IEEE Trans.Electron Dev. 43 911

    [12]

    Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣 荣喜、戴显英 2009 物理学报58 4958 ] 〖14] Zhang W M, Fossum J G 2005 IEEE Trans.Electron Dev. 52 263

    [13]

    Mukhopadhyay S, Neau C, Cakici R 2003 IEEE Trans. Syst. 11 716

    [14]

    Cao K, Lee W C, Liu W, Liu W, Jin X, Su P, Fung S K H, An J X, Yu B, Hu C 2000 In IEDM Tech. Digest. San Francisco CA p815

    [15]

    Yang L F, Watling J R, Richard C W, Mirela B, Barker J R, Asen A, Scott R 2004 Semicond. Sci. Technol. 19 1174

    [16]

    Du G, Liu X Y, Xia Z L, Yang J F, Han R Q 2010 Chin. Phys. B 19 057304

    [17]

    Lin C Y, Liu C W 1997 Appl. Phy. Lett. 70 1441

  • [1]

    Irisawa T, Numata T, Toyoda E, Hirashita N, Tezuka T, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 3159

    [2]

    Mondal I, Dutta A K 2008 IEEE Trans. Electron Dev. 55 1682

    [3]

    Lin C H, Kuo J B, Su K W, Liu S 2006 Electro. Lett. 42 182

    [4]

    Yang N, Henson W K, Wortman J 2000 IEEE Trans. Electron Dev. 47 1634

    [5]

    Joshi G, Singh D N, Thangjam S 2008 IEEE Conference Arlington Texas p37

    [6]

    Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Acta Phys. Sin. 59 579 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2010 物理学报 59 579 ]

    [7]

    Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys.Sin. 56 5036 (in Chinese)[陈卫兵、徐静平、邹 晓、李 艳萍、许胜国、胡致富 2006 物理学报56 5036] 〖8] Cao Y R, Ma X H, Hao Y, Hu S G 2010 Chin. Phys. B 19 047307

    [8]

    Padhi R, Kothari M 2009 Int. J. Innova. Comp., Inf. Cont. 5 399

    [9]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]

    [10]

    Pavel A A, Sharma A, Islam N 2008 IEEE Electron Dev. Lett. 29 1370

    [11]

    O’Neil A G, Antoniadis D A 1996 IEEE Trans.Electron Dev. 43 911

    [12]

    Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣 荣喜、戴显英 2009 物理学报58 4958 ] 〖14] Zhang W M, Fossum J G 2005 IEEE Trans.Electron Dev. 52 263

    [13]

    Mukhopadhyay S, Neau C, Cakici R 2003 IEEE Trans. Syst. 11 716

    [14]

    Cao K, Lee W C, Liu W, Liu W, Jin X, Su P, Fung S K H, An J X, Yu B, Hu C 2000 In IEDM Tech. Digest. San Francisco CA p815

    [15]

    Yang L F, Watling J R, Richard C W, Mirela B, Barker J R, Asen A, Scott R 2004 Semicond. Sci. Technol. 19 1174

    [16]

    Du G, Liu X Y, Xia Z L, Yang J F, Han R Q 2010 Chin. Phys. B 19 057304

    [17]

    Lin C Y, Liu C W 1997 Appl. Phy. Lett. 70 1441

计量
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  • PDF下载量:  847
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-04-15
  • 修回日期:  2010-05-26
  • 刊出日期:  2011-01-05

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