Graphene is a two-dimensional material. Due to its unique energy band structure, is considered a promising material for THz optoelectronic devices. In this work, we report our measurements with Raman spectroscopy and THz optical conductivity of graphene, is deposited on fuse silica substrates by CVD processes, by temperature-dependent terahertz time-domain spectroscopy. The impurity of copper and its treatments can affect the quality of graphene. The intraband scattering rate and plasma frequency can be obtained by fitting with theoretical models. Other physical parameters, including carrier density and carrier mobility, can be deduced from the theoretical fitting. Here, we obtain the scattering rate is a constant with different temperature. This implies the scattering mechanism might be independent of phonon scattering, dependent of impurity scattering.