Graphene, an atomically thin sheet of sp2-bonded carbon atoms arranged in a hexagonal lattice, possesses many exceptional properties, such as high mobility, high transparency, great thermal conductivity, strong mechanical property and high elasticity. Owing to the much study all over the world, there are already many ways to produce graphene, such as micromechanical exfoliation, epitaxial growth on silicon carbide, and chemical vapor deposition (CVD). Among them, CVD is the most promising method. In a typical CVD method, copper foil substrate is chosen to grow graphene in hydrogen and methane (as carbon source) flowing. It can grow uniform monolayer graphene (95% of total area) while some regions are 2 or 3 layers graphene (5% of total area). But the number of graphene layers cannot be controlled and uniform multi-layer graphene cannot be grown either. Therefore, in order to study the interesting properties of few-layer graphene, developing a graphene production method to control different numbers of graphene layers is an issue to overcome. In this work, we found a new kind of CVD method, using oil backstreaming from the oil seal rotary vane pump as carbon source to grow different numbers of graphene layers in 3 mTorr on copper foil without hydrogen and hydrocarbon gas flow. We use three ways of cleaned new quartz tube, high purity nitrogen flow and replacing oil seal rotary vane pump with dry pump to prove that the carbon source is exactly the backstreaming of oil vapor. In Raman spectrum analysis, we discovered that graphene can grow on 0.01mm thick (99.9% purity) copper foil in 1050°C and 30 minutes growth condition while different numbers of graphene layers and graphite grow on 0.1mm thick (99.96% purity) ones randomly. After growth, graphene can be transferred to arbitrary target substrate with Polymethylmethacrylate (PMMA). In Hall effect measurement, graphene mobility can reach 440cm2/Vs and it is comparable to normal CVD graphene’s mobility 526 cm2/Vs. We transferred graphene to SiO2 substrate to fabricate graphene field effect transistor (FET). In graphene FET electricity measurement, we found that graphene are highly p-doped mainly due to the absorption of water and oxygen in air or photoresist residue. Although the quality still needs to be improved, using oil vapor as carbon source provided a new and easy way to grow different numbers of graphene layers. It also makes the production safer without hydrogen flow. Moreover, this new method enables multi-layer graphene to grow on copper foil, overcoming the situation of only monolayer graphene formation on copper foil in the past. If we can control the numbers of graphene layers stably, it will be a milestone in graphene growth.