In the development of phase-change optical disk, the interface layer was used to prevent sulfur atom diffusing into the GeSbTe recording layer from the ZnS-SiO2 dielectric layer and suppress the atomic movement of GeSbTe layer. Furthermore, an interface layer can accelerate the crystallization rate of recording material to increase recording speed of phase change optical disk. In previous study of Yamada etc., interface layers deposited in both sides of the recording layer presents stronger accelerating effect than that in one side. This result proposes that interface layer will cause a non-uniform contact between the interface layer and recording layer to form numerous nuclei, which can enhance the crystallization of recording layer. Nitride material, such as GeCrN, is widely used in the product of rewritable optical disk, especially for DVD-RAM. However, with the development of high-speed optical disk, nitride material as an interface layer show insufficient characteristic to meet the requirement. Therefore, oxide material, such as ZrCrSiO, is recently studied to replace nitride as the interface layer for the demand of high-speed recording. In this study, GeCrN and ZrCrSiO materials are employed as the interface layer to study their effects on recording properties and feasibility at high speed recording.