奈米壓電材料之研究與應用:
氧化鋅奈米柱與氮化銦鎵/氮化鎵多重量子井

在本論文中，我們討論兩種半導體複合材料的光學及壓電性質：氮化銦鎵/氮化鎵多重量子井、氧化鋅奈米柱。我們利用氧化鋅的壓電特性，當氧化鋅奈米柱在感測器表面產生形變時，其電偶極會影響氮化銦鎵/氮化鎵多層量子井的內電場，而因為量子侷限史塔克效應的關係，量子井的光致螢光光譜、拉曼散射光譜會有所改變。這些現象代表著氧化鋅與氮化銦鎵/氮化鎵多層量子井複合材料可開發成壓力感知器的可能性。

關鍵字

壓電效應；氧化鋅；奈米柱；多層量子井；氮化銦鎵；氮化鎵

並列摘要

In this thesis, we will study a novel semiconductor composite consisting of InGaN/GaN multiple quantum well (MQW) and zinc oxide nanorods, we have found some interesting phenomena. Relying on the piezoelectric-potential created in zinc oxide under strain, which will alter the electric field in MQWs. It will induce the change of photoluminescence spectra and Raman spectra could be changed due to the quantum confined Stark effect. As a result, the composite consisting of InGaN/GaN MQWs and ZnO nanorods has a great opportunity in the development of pressure detectors or strain sensors.

並列關鍵字

piezoelectric ； piezotronic ； ZnO ； nanorods ； multiple quantum well ； InGaN ； GaN

參考文獻

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18. F. C. Wang, C. L. Cheng, Y. F. Chen, C. F. Huang, and C. C. Yang, Semicond. Sci. Technol. 22, 896 (2007).

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DECCAN HERALD.

2. H. H. Wang, C. S. Xie, D. W. Zeng, J. Crystal Growth 277, 372 (2005).

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奈米壓電材料之研究與應用: 氧化鋅奈米柱與氮化銦鎵/氮化鎵多重量子井

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