In this paper we have tried to analyze the electrical transport properties of InAlN/GaN heterostructure without and with a 1.2 nm thick AlN interlayer, theoretically, and the most important effective parameters in controlling the temperature-dependent carrier mobility have been quantitatively studied in the 77-600 K temperature range. My analysis indicates that by inserting a 1.2 nm thick interlayer, the mobility of this system increases, which is attributed to the reduction of alloy disorder, interface roughness, crystal defect, and ionized impurity due to the interface charges scattering mechanisms. Also, the obtained results show that the interface roughness and alloy disorder scattering mechanism have a strong e_ect on the carrier mobility especially at low temperatures.